Biphenyl

Biphenyl

SCHEMBL6253922

CCCCCCCCS(=O)(=O)O.I.c1ccc(-c2ccccc2)cc1

nearest known ligand 0.50

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Known targets — ChEMBL curated mechanism

ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of Biphenyl. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 1/20 0.47
NAAA Q02083 1/20 0.44
ITGB1 P05556 1/20 0.43
ITGA4 P13612 1/20 0.43
S1PR2 O95136 1/20 0.43
S1PR1 P21453 1/20 0.43
S1PR3 Q99500 1/20 0.43
PTGES O14684 2/20 0.43
ALOX5 P09917 2/20 0.43
EPHX2 P34913 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Biphenyl SCHEMBL27876466 0.98 PTPN1 (0.48) PTPN1NAAAITGB1ITGA4S1PR2
Biphenyl SCHEMBL27692896 0.91 HPGD (0.43) PTPN1ALOX5
Benzene SCHEMBL27649746 0.87 EPHX2 (0.51) S1PR2S1PR1S1PR3EPHX2
Benzene SCHEMBL112147 0.87 EPHX2 (0.51) S1PR2S1PR1S1PR3EPHX2
Benzene SCHEMBL11150225 0.87 EPHX2 (0.51) S1PR2S1PR1S1PR3EPHX2
Benzene SCHEMBL28758814 0.87 EPHX2 (0.51) S1PR2S1PR1S1PR3EPHX2
Benzene SCHEMBL27649739 0.87 EPHX2 (0.51) S1PR2S1PR1S1PR3EPHX2
Phenol SCHEMBL10879720 0.86 ESR1 (0.47) NAAAS1PR2S1PR1S1PR3EPHX2
Triphenylphosphine Oxide SCHEMBL29152235 0.85 PTPN1 (0.44) PTPN1NAAAS1PR2S1PR1S1PR3
Toluene SCHEMBL29170928 0.84 NAAA (0.42) NAAAS1PR2S1PR1S1PR3EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1035436-B1 Resist pattern formation method JSR CORP (JP) 2005-09-07 EP disclosed
US-6403288-B1 COATING WITH COPOLYMER COMPRISING HYDROXYSTYRENE DERIVATIVE MONOMER HAVING ACID DISSOCIABLE GROUP; EXPOSURE TO RADIATION; DEVELOPMENT JSR CORPORATION (JP) 2002-06-11 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed