SCHEMBL629133

SCHEMBL629133

COc1ccccc1[Si](Cl)(OC)OC

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 3/20 0.50
CA2 P00918 3/20 0.50
CA7 P43166 2/20 0.50
CA9 Q16790 2/20 0.50
CA12 O43570 1/20 0.50
CA4 P22748 1/20 0.50
CA14 Q9ULX7 1/20 0.50
ALDH1A1 P00352 8/20 0.41
TP53 P04637 2/20 0.41
TDP1 Q9NUW8 2/20 0.41
TSHR P16473 1/20 0.41
ADRA2B P18089 1/20 0.41
PTGS1 P23219 1/20 0.41
MAPK1 P28482 2/20 0.40
HTT P42858 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
ENPP2 Q13822 1/20 0.39
NQO2 P16083 3/20 0.38
ORAI1 Q96D31 1/20 0.38
ORAI2 Q96SN7 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2931583 0.82 CA1 (0.55) CA1CA2CA7CA9CA12
SCHEMBL1354646 0.82 CA1 (0.55) CA1CA2CA7CA9CA12
SCHEMBL30189992 0.82 CA1 (0.55) CA1CA2CA7CA9CA12
SCHEMBL16167037 0.80 CA1 (0.52) CA1CA2CA7CA9CA12
SCHEMBL5090372 0.80 CA1 (0.52) CA1CA2CA7CA9CA12
SCHEMBL1971497 0.77 CA1 (0.55) CA1CA2CA7CA9CA12
SCHEMBL19181561 0.77 CA1 (0.60) CA1CA2CA7CA9CA12
SCHEMBL27707263 0.76 CA1 (0.52) CA1CA2CA7CA9CA12
SCHEMBL2293353 0.76 CA1 (0.52) CA1CA2CA7CA9CA12
SCHEMBL17835353 0.76 TSHR (0.39) ALDH1A1TP53TDP1TSHRL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11801662-B2 Cementitious panels with polymeric-film facing material GOLD BOND BUILDING PRODUCTS, LLC (US) 2023-10-31 US disclosed
US-20200207060-A1 Cementitious Panels with Polymeric-Film Facing Material BANK OF AMERICA, N.A., AS COLLATERAL AGENT 2020-07-02 US disclosed
US-8603588-B2 Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film MITSUI CHEMICALS, INC. (JP) 2013-12-10 US disclosed
US-8394457-B2 Precursor composition for porous thin film, method for preparation of the precursor composition, porous thin film, method for preparation of the porous thin film, and semiconductor device ULVAC, INC. (JP) 2013-03-12 US disclosed
US-8304924-B2 Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device MITSUI CHEMICALS, INC. (JP) 2012-11-06 US disclosed
US-8288295-B2 Manufacturing method of semiconductor device and semiconductor device produced therewith ROHM CO., LTD. (JP) 2012-10-16 US disclosed
US-8212338-B2 Manufacturing method of semiconductor device and semiconductor device produced therewith ULVAC (JP) 2012-07-03 US disclosed
EP-1547975-B1 METHOD FOR MODIFYING POROUS FILM, MODIFIED POROUS FILM AND USE OF SAME MITSUI CHEMICALS INC (JP) 2012-02-22 EP disclosed
US-20110241210-A1 COMPOSITION FOR SEALING SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE MITSUI CHEMICALS, INC. (JP) 2011-10-06 US disclosed
EP-2357664-A1 COMPOSITION FOR SEALING SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE Mitsui Chemicals, Inc. (JP) 2011-08-17 EP disclosed
US-7807267-B2 Method of modifying porous film, modified porous film and use of same MITSUI CHEMICALS, INC. (JP) 2010-10-05 US disclosed
US-20100200990-A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED THEREWITH ULVAC INC. (JP) 2010-08-12 US disclosed
US-7727907-B2 Manufacturing method of semiconductor device and semiconductor device produced therewith ULVAC INC. (JP) 2010-06-01 US disclosed
US-20090186210-A1 PRECURSOR COMPOSITION FOR POROUS THIN FILM, METHOD FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS THIN FILM, METHOD FOR PREPARATION OF THE POROUS THIN FILM, AND SEMICONDUCTOR DEVICE ULVAC. INC. (JP) 2009-07-23 US disclosed
US-20090179357-A1 Method and Apparatus for Producing Porous Silica MITSUI CHEMICALS, INC. (JP) 2009-07-16 US disclosed
EP-2025709-A1 PRECURSOR COMPOSITION FOR POROUS MEMBRANE, PROCESS FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS MEMBRANE, PROCESS FOR PRODUCTION OF THE POROUS MEMBRANE, AND SEMICONDUCTOR DEVICE ULVAC, INC. (JP) 2009-02-18 EP disclosed
US-20080122101-A1 Manufacturing Method Of Semiconductor Device And Semiconductor Device Produced Therewith ROHM CO., LTD. (JP) 2008-05-29 US disclosed
US-20070228568-A1 Manufacturing Method of Semiconductor Device and Semiconductor Device Produced Therewith ROHM CO., LTD. (JP) 2007-10-04 US disclosed
US-20060040110-A1 Method of modifying porous film, modified porous film and use of same MITSUI CHEMICALS, INC. (JP) 2006-02-23 US disclosed
EP-1547975-A1 METHOD FOR MODIFYING POROUS FILM, MODIFIED POROUS FILM AND USE OF SAME Mitsui Chemicals, Inc. (JP) 2005-06-29 EP disclosed