SCHEMBL6316338

SCHEMBL6316338

O=C1c2ccccc2-c2cccc(-c3ccc(O)cc3)c21

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BACE1 P56817 2/20 0.51
PTPN1 P18031 1/20 0.51
MAPT P10636 6/20 0.50
MEN1 O00255 5/20 0.50
KMT2A Q03164 5/20 0.50
MAOA P21397 5/20 0.50
ALDH1A1 P00352 4/20 0.50
LMNA P02545 2/20 0.50
ABL1 P00519 1/20 0.47
ABCB1 P08183 1/20 0.47
BCR P11274 1/20 0.47
NPC1 O15118 3/20 0.46
RAB9A P51151 3/20 0.46
SMN1; SMN2 Q16637 3/20 0.46
MAOB P27338 2/20 0.46
HPGDS O60760 1/20 0.46
PKM P14618 1/20 0.46
BCL2 P10415 3/20 0.46
MCL1 Q07820 3/20 0.46
APAF1 O14727 2/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9843200 0.92 MAPT (0.52) BACE1PTPN1MAPTMEN1KMT2A
SCHEMBL16601841 0.90 MAOA (0.56) BACE1PTPN1MAPTMEN1KMT2A
SCHEMBL3640519 0.89 PTPN1 (0.49) BACE1PTPN1MAPTMEN1KMT2A
SCHEMBL978805 0.84 MAPT (0.57) BACE1PTPN1MAPTMEN1KMT2A
SCHEMBL22182158 0.83 TDP2 (0.51) MAPTMEN1KMT2AMAOAALDH1A1
SCHEMBL16656214 0.83 MAOA (0.70) BACE1MAPTMEN1KMT2AMAOA
SCHEMBL16601842 0.81 TTR (0.49) BACE1MAPTMEN1KMT2AMAOA
SCHEMBL19283489 0.81 ADORA2A (0.55) MAPTMEN1KMT2AMAOAALDH1A1
SCHEMBL30540289 0.81 PTPRC (0.53) MAPTMEN1KMT2AMAOAALDH1A1
SCHEMBL30519266 0.81 ADORA2A (0.55) MAPTMEN1KMT2AMAOAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240109997-A1 RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-04-04 US disclosed
CN-116888181-A Resin, composition, resist pattern forming method, circuit pattern forming method, and resin purifying method 三菱瓦斯化学株式会社 2023-10-13 CN disclosed
WO-2022176571-A1 RESIN, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR REFINING RESIN 三菱瓦斯化学株式会社 2022-08-25 WO disclosed
WO-2021256527-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION USING DIARYLMETHANE DERIVATIVE 日産化学株式会社 2021-12-23 WO disclosed
CN-113412533-A Spin-on compositions containing inorganic oxide components and alkynoxy-substituted spin-on carbon components useful as hardmask and fill materials with improved shelf life 默克专利股份有限公司 2021-09-17 CN disclosed
CN-111492310-A Ethynyl derived complexes, compositions comprising the same, methods of making coatings therefrom, and methods of making devices comprising the coatings 默克专利有限公司 2020-08-04 CN disclosed
US-6855371-B2 Method for producing a microstructured surface relief by embossing thixotropic layers INSTITUT FUER NEUE MATERIALIEN GEMEINNUETZIGE GMBH (DE) 2005-02-15 US disclosed
US-20040026832-A1 Method for producing a microstructured surface relief by embossing thixotropic layers LEIBNIZ-INSTITUT FUER NEUE MATERIALIEN GEMEINNUETZIGE GMBH (DE) 2004-02-12 US disclosed
EP-0241260-B1 ACETOPHENONE BASED BISPHENOL POLYARYLATE RESIN COMPOSITIONS, THEIR FORMATION AND MOLDING ARCO Chemical Technology, L.P. (US) 1992-03-04 EP disclosed