Fluoride

Fluoride

SCHEMBL6318587

F.F.F.F.[SiH4].[SiH4]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL2024982 1.00
Fluoride SCHEMBL3142094 1.00
Fluoride SCHEMBL10832632 1.00
Fluoride SCHEMBL8205054 1.00
Fluoride SCHEMBL4861337 1.00
Fluoride SCHEMBL21058049 1.00
Fluoride SCHEMBL9147662 1.00
Fluoride SCHEMBL259811 1.00
Fluoride SCHEMBL971782 1.00
Fluoride SCHEMBL2024981 1.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106733547-A A kind of preparation method of wear-resisting super-hydrophobic metal surface 西安理工大学 2017-05-31 CN disclosed
CN-102405251-B Based on the aqueous silane system and uses thereof of three (alkoxysilylalkyl) amine EVONIK DEGUSSA GMBH (DE) 2015-11-25 CN disclosed
CN-101309981-B Mixed silanes NANOGATE AG 2012-03-21 CN disclosed
US-6979656-B2 Carbon and halogen doped silicate glass dielectric layer and method for fabricating the same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2005-12-27 US disclosed
US-20050121751-A1 Carbon and halogen doped silicate glass dielectric layer and method for fabricating the same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 2005-06-09 US disclosed
US-6136685-A VAPOR DEPOSITING A PLASMA GENERATED BY A RADIO FREQUENCY BIAS POWER WITH A RADIO FREQUENCY SOURCE GENERATOR APPLIED MATERIALS, INC. (US) 2000-10-24 US disclosed