SCHEMBL633982

SCHEMBL633982

CCC1=C([Mg]C2=CC=CC2)CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL181155 0.82
SCHEMBL8424463 0.77
SCHEMBL6895106 0.73
SCHEMBL43451 0.72
SCHEMBL7726487 0.72
SCHEMBL28465385 0.70
SCHEMBL15511352 0.70
SCHEMBL94475 0.70
SCHEMBL1626394 0.68
SCHEMBL7723431 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8513118-B2 Method for producing compound semiconductor light-emitting device SHARP KABUSHIKI KAISHA (JP) 2013-08-20 US disclosed
US-20120080712-A1 METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR LIGHT-EMITING DEVICE SHARP KABUSHIKI KAISHA (JP) 2012-04-05 US disclosed
EP-2051308-B1 Group III nitride semiconductor device SHOWA DENKO KK (JP) 2012-02-22 EP disclosed
EP-1059677-B1 Method for manufacturing a nitride semiconductor device SHOWA DENKO KK (JP) 2011-08-24 EP disclosed
US-20100002738-A1 Nitride-based semiconductor light-emitting device SHARP KABUSHIKI KAISHA 2010-01-07 US disclosed
EP-2051308-A2 Method for manufacturing a nitride semiconductor device and device manufactured by the method SHOWA DENKO KABUSHIKI KAISHA (JP) 2009-04-22 EP disclosed
US-6555846-B1 Method for manufacturing a nitride semiconductor device and device manufactured by the method PIONEER CORPORATION (JP) 2003-04-29 US disclosed
EP-1104947-A2 Nitride semiconductor laser and method for fabricating the same Pioneer Corporation (JP) 2001-06-06 EP disclosed
EP-1059677-A2 Method for manufacturing a nitride semiconductor device and device manufactured by the method Pioneer Corporation (JP) 2000-12-13 EP disclosed