SCHEMBL181155

SCHEMBL181155

CCC1=C([Mg]C2=C(CC)C=CC2)CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6895106 0.89
SCHEMBL1626394 0.84
SCHEMBL11042215 0.82
SCHEMBL633982 0.82
SCHEMBL94475 0.81
SCHEMBL4452297 0.76
Hydrochloric Acid SCHEMBL968137 0.73
SCHEMBL53268 0.73
SCHEMBL1133064 0.73
SCHEMBL18076018 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 502 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12637767-B2 Selective hydration by site selective atomic layer deposition UCHICAGO ARGONNE, LLC (US) 2026-05-26 US claimed
US-20260007571-A1 PHARMACEUTICAL CONTAINER WITH PH PROTECTIVE LAYER DEPOSITED BY ATOMIC LAYER DEPOSITION INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2026-01-08 US claimed
US-20250382700-A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND PROTECTIVE FILM TOKYO ELECTRON LTD (JP) 2025-12-18 US claimed
US-12447107-B2 Pharmaceutical container with pH protective layer deposited by atomic layer deposition INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2025-10-21 US claimed
US-20250248896-A1 PHARMACEUTICAL CONTAINER WITH PH PROTECTIVE LAYER DEPOSITED BY ATOMIC LAYER DEPOSITION INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2025-08-07 US claimed
US-12303461-B1 Pharmaceutical container with pH protective layer deposited by atomic layer deposition INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2025-05-20 US claimed
US-12109173-B1 Pharmaceutical container with pH protective layer deposited by atomic layer deposition INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2024-10-08 US claimed
WO-2024176935-A1 SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT SYSTEM, AND PROTECTIVE FILM 東京エレクトロン株式会社 2024-08-29 WO claimed
EP-4411764-A2 CAPACITOR, METHOD OF PREPARING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME Samsung Electronics Co., Ltd. (KR) 2024-08-07 EP claimed
US-20240243164-A1 CAPACITOR, METHOD OF PREPARING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-07-18 US claimed
US-9828673-B2 Method of forming very reactive metal layers by a high vacuum plasma enhanced atomic layer deposition system SVT ASSOCIATES, INC. (US) 2017-11-28 US claimed
US-20170130330-A1 INTERFACE ENGINEERING DURING MGO DEPOSITION FOR MAGNETIC TUNNEL JUNCTIONS LAM RESEARCH CORPORATION 2017-05-11 US claimed
US-8962893-B2 Organometallic compound purification ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-02-24 US claimed
US-20130337056-A1 COATED SOLID PHARMACEUTICAL PREPARATION MERCK PATENT GMBH (DE) 2013-12-19 US claimed
WO-2012116814-A1 COATED SOLID PHARMACEUTICAL PREPARATION MERCK PATENT GMBH (DE) 2012-09-07 WO claimed
US-20120049328-A1 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method TSUDA YUHZOH (JP) 2012-03-01 US claimed
US-20090121320-A1 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method Sharp Fukuyama Laser Co., Ltd. (JP) 2009-05-14 US claimed
US-7449404-B1 Method for improving Mg doping during group-III nitride MOCVD SANDIA CORPORATION (US) 2008-11-11 US claimed
US-20080124924-A1 Scheme for copper filling in vias and trenches APPLIED MATERIALS, INC. 2008-05-29 US claimed
WO-2008011403-A2 NEW SCHEME FOR COPPER FILLING IN VIAS AND TRENCHES APPLIED MATERIALS, INC. (US) 2008-01-24 WO claimed