⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4452297 | 0.94 | — | — | |
| SCHEMBL181155 | 0.81 | — | — | |
| SCHEMBL6895106 | 0.72 | — | — | |
| SCHEMBL2788154 | 0.71 | — | — | |
| SCHEMBL15513850 | 0.70 | — | — | |
| SCHEMBL53268 | 0.70 | — | — | |
| SCHEMBL1133064 | 0.70 | — | — | |
| SCHEMBL633982 | 0.70 | — | — | |
| SCHEMBL8575865 | 0.69 | — | — | |
| SCHEMBL18076018 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 450 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113066876-B | Ultraviolet detector and preparation method thereof | 中国科学院长春光学精密机械与物理研究所 | 2022-12-06 | — | — | CN | claimed |
| CN-114592180-A | Preparation method of magnesium fluoride film and related equipment | 嘉兴中科微电子仪器与设备工程中心 | 2022-06-07 | — | — | CN | claimed |
| CN-111785793-A | ZnMgO ultraviolet detector and preparation method thereof | 中国科学院长春光学精密机械与物理研究所 | 2020-10-16 | — | — | CN | claimed |
| CN-111785795-A | ZnMgGaO ultraviolet detector and preparation method thereof | 中国科学院长春光学精密机械与物理研究所 | 2020-10-16 | — | — | CN | claimed |
| EP-3335258-A1 | METAL FLUORIDE COATED LITHIUM INTERCALATION MATERIAL AND METHODS OF MAKING SAME AND USES THEREOF | Technion - Research & Development Foundation Ltd (IL) | 2018-06-20 | — | — | EP | claimed |
| US-20070015306-A1 | Manufacturing method of P type group III nitride semiconductor layer and light emitting device | KYOCERA CORPORATION | 2007-01-18 | — | — | US | claimed |
| JP-9116233-A | — | — | None | — | — | JP | disclosed |
| WO-2026098381-A1 | METAL FLUORIDE THIN FILM, PREPARATION METHOD THEREFOR AND USE THEREOF | 江苏微导纳米科技股份有限公司 | 2026-05-15 | — | — | WO | disclosed |
| US-20250301689-A1 | HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-25 | — | — | US | disclosed |
| US-12356651-B2 | Method of manufacturing high-electron-mobility transistor | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-08 | — | — | US | disclosed |
| CN-119392215-A | Metal fluoride film and low-temperature ALD preparation method and application thereof | 江苏微导纳米科技股份有限公司 | 2025-02-07 | — | — | CN | disclosed |
| US-12029144-B2 | Encapsulation layer for chalcogenide material | EUGENUS, INC. (US) | 2024-07-02 | — | — | US | disclosed |
| CN-117501410-A | Encapsulation layer for chalcogenide material | 尤金纳斯股份有限公司 | 2024-02-02 | — | — | CN | disclosed |
| US-6335546-B1 | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device | SHARP KABUSHIKI KAISHA (JP) | 2002-01-01 | — | — | US | disclosed |
| US-20010039104-A1 | Semiconductor substrate, light-emitting device, and method for producing the same | TSUDA YUHZOH (JP) | 2001-11-08 | — | — | US | disclosed |
| US-20010035532-A1 | Nitride semiconductor laser device and optical pickup apparatus therewith | SHARP KABUSHIKI KAISHA (JP) | 2001-11-01 | — | — | US | disclosed |
| US-6294440-B1 | Semiconductor substrate, light-emitting device, and method for producing the same | SHARP KABUSHIKI KAISHA (JP) | 2001-09-25 | — | — | US | disclosed |
| US-6225195-B1 | HAS A SEMICONDUCTOR LAYER CONSISTING OF A P-TYPE DOPANT-NONDOPED LAYER, AND A SEMICONDUCTOR LAYER INCLUDING A P-TYPE DOPANT-DOPED LAYER. | SUMITOMO CHEMICAL COMPANY LIMITED (JP) | 2001-05-01 | — | — | US | disclosed |
| US-6023077-A | Group III-V compound semiconductor and light-emitting device | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-02-08 | — | — | US | disclosed |
| JP-H09116233-A | 3-5 GROUP OPTICAL SEMICONDUCTOR ELEMENT AND 3-5 GROUP OPTICAL SEMICONDUCTOR INTEGRATED ELEMENT | NEC CORP | 1997-05-02 | — | — | JP | disclosed |