SCHEMBL6348114

SCHEMBL6348114

C=CC(=O)C1CCCCO1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NOS2 P35228 1/20 0.38
ALDH1A1 P00352 4/20 0.34
POLB P06746 3/20 0.33
HPGD P15428 7/20 0.33
TSHR P16473 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
RECQL P46063 1/20 0.33
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
TP53 P04637 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
HSD17B10 Q99714 1/20 0.32
CYP2C9 P11712 1/20 0.32
KDM4E B2RXH2 1/20 0.32
THRA P10827 1/20 0.32
THRB P10828 1/20 0.32
HDAC3 O15379 2/20 0.31
HDAC1 Q13547 2/20 0.31
HDAC2 Q92769 2/20 0.31
PKM P14618 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8459914 0.94
SCHEMBL27942940 0.81 NOS2 (0.39) NOS2ALDH1A1POLBHPGDTSHR
SCHEMBL27955593 0.79 NOS2 (0.38) NOS2ALDH1A1POLBHPGDTSHR
SCHEMBL27938014 0.79 NOS2 (0.38) NOS2ALDH1A1POLBHPGDTSHR
SCHEMBL7978094 0.76
SCHEMBL217171 0.75 NOS2 (0.38) NOS2ALDH1A1POLBHPGDTSHR
SCHEMBL11367676 0.75 NOS2 (0.44) NOS2ALDH1A1POLBHPGDTSHR
SCHEMBL28718432 0.75 NOS2 (0.34) NOS2ALDH1A1POLBHPGDTSHR
SCHEMBL16283619 0.74
SCHEMBL10619156 0.73 HPGD (0.37) NOS2ALDH1A1POLBHPGDMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6974658-B2 HIGH MOLECULAR COMPOUND, MONOMER COMPOUNDS AND PHOTOSENSITIVE COMPOSITION FOR PHOTORESIST, PATTERN FORMING METHOD UTILIZING PHOTOSENSITIVE COMPOSITION, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENTS KABUSHIKI KAISHA TOSHIBA (JP) 2005-12-13 US disclosed
US-20030235781-A1 High molecular compound, monomer compounds and photosensitive composition for photoresist, pattern forming method utilizing photosensitive composition, and method of manufacturing electronic components KABUSHIKI KAISHA TOSHIBA (JP) 2003-12-25 US disclosed