SCHEMBL6364235

SCHEMBL6364235

CCCC[Si](C)(C)N1C(=O)C=CC1=O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MGLL Q99685 13/20 0.44
FAAH O00519 5/20 0.44
PTGS1 P23219 3/20 0.44
PTGS2 P35354 3/20 0.44
ALDH1A1 P00352 3/20 0.38
MAPT P10636 3/20 0.38
LMNA P02545 3/20 0.38
NPSR1 Q6W5P4 3/20 0.38
GMNN O75496 1/20 0.38
THPO P40225 1/20 0.38
BLM P54132 1/20 0.38
PMP22 Q01453 1/20 0.38
GAA P10253 1/20 0.34
THRB P10828 1/20 0.34
GSK3A P49840 2/20 0.32
GSK3B P49841 2/20 0.32
HTT P42858 2/20 0.32
HSP90AA1 P07900 1/20 0.32
TLR9 Q9NR96 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31187422 0.69 MGLL (0.44) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL3482758 0.66 MGLL (0.45) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL31187420 0.66 MGLL (0.46) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL59456 0.64 MGLL (0.83) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL170518 0.62 MGLL (0.95) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL9497658 0.61 MGLL (1.00) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL209436 0.61 MGLL (1.00) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL2181536 0.61 MGLL (1.00) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL9640374 0.61 MGLL (1.00) MGLLFAAHPTGS1PTGS2ALDH1A1
SCHEMBL12501993 0.61 MGLL (1.00) MGLLFAAHPTGS1PTGS2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-4338395-A None JP disclosed
US-6887649-B2 Multi-layered resist structure and manufacturing method of semiconductor device FUJITSU LIMITED (JP) 2005-05-03 US disclosed
US-20020192595-A1 Multi-layered resist structure and manufacturing method of semiconductor device FUJITSU LIMITED (JP) 2002-12-19 US disclosed
JP-H04338395-A N-TERTIARY-BUTYLDIALKYLSILYLMALEIMIDE AND PRODUCTION THEREOF SHIN ETSU CHEM CO LTD 1992-11-25 JP disclosed