SCHEMBL6374192

SCHEMBL6374192

CCC[C@@H](C)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3315438 1.00
SCHEMBL3315106 0.82
SCHEMBL6176128 0.81 TSHR (0.35)
SCHEMBL18106104 0.80 OPRM1 (0.52)
SCHEMBL610212 0.80 OPRM1 (0.52)
SCHEMBL27916395 0.79
SCHEMBL13011270 0.79
SCHEMBL13109452 0.79 LMNA (0.45)
SCHEMBL3411855 0.79
SCHEMBL2759866 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 316 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-07 US disclosed
US-11693314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 US disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
EP-3184561-A1 RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER Shin-Etsu Chemical Co., Ltd. (JP) 2017-06-28 EP disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed
EP-3032333-B1 SHRINK MATERIAL AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2017-05-24 EP disclosed
US-9645491-B2 Sulfonium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-9645491-B2 Sulfonium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-20070128555-A1 Novel ester compound, polymer, resist composition, and patterning process CENTRAL GLASS CO., LTD. 2007-06-07 US disclosed
US-7202318-B2 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-10 US disclosed
US-7202318-B2 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-10 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-20070009832-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-11 US disclosed
US-20070009832-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-11 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed