SCHEMBL6415488

SCHEMBL6415488

CCCCCOC(OCCCCC)(OCCCCC)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.47
CYP3A4 P08684 3/20 0.42
TSHR P16473 2/20 0.42
MAPK1 P28482 2/20 0.42
TP53 P04637 1/20 0.42
LMNA P02545 3/20 0.41
ALDH1A1 P00352 2/20 0.41
KIF11 P52732 1/20 0.38
PTPN1 P18031 1/20 0.38
NR1I2 O75469 2/20 0.38
CHRM2 P08172 2/20 0.38
ADRA2A P08913 2/20 0.38
OPRK1 P41145 2/20 0.38
HTR2B P41595 2/20 0.38
SLC6A3 Q01959 2/20 0.38
MLNR O43193 1/20 0.38
ESR1 P03372 1/20 0.38
NR3C1 P04150 1/20 0.38
PGR P06401 1/20 0.38
ADRB2 P07550 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6421194 0.94 LTA4H (0.47) LTA4HCYP3A4TSHRMAPK1ALDH1A1
SCHEMBL28729169 0.91 LTA4H (0.41) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL6421037 0.87 KIF11 (0.43) LTA4HCYP3A4TSHRMAPK1LMNA
SCHEMBL17243243 0.84 KIF11 (0.57) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL25077100 0.82 KIF11 (0.55) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL20072694 0.82 KIF11 (0.55) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL8142505 0.82 KIF11 (0.55) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL21411547 0.82 KIF11 (0.55) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL5820348 0.82 KIF11 (0.55) LTA4HCYP3A4TSHRMAPK1TP53
SCHEMBL4803716 0.82 KIF11 (0.55) LTA4HCYP3A4TSHRMAPK1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20050003085-A1 Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film JSR CORPORATION (JP) 2005-01-06 US disclosed
US-6806210-B2 MIXTURES OF GROUP V COMPOUNDS AND SOLVENTS, USED TO FORM DIELECTRIC LAYERS ON SILICON SUBSTRATES; HEAT TREATMENT JSR CORPORATION (JP) 2004-10-19 US disclosed
US-20030003235-A1 From reaction product of a tantalum alkoxide and an amino alcohol, polyalcohol, beta-diketone or ketoester, ester of of beta-dicarboxylic acid, lactic acid, ethyl lactate or 1,5-cyclooctadiene or a hydrolyzate of reaction product JSR CORPORATION (JP) 2003-01-02 US disclosed