SCHEMBL641592

SCHEMBL641592

CCN(C)[Si](N(C)CC)(N(C)CC)N(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6379764 0.75
SCHEMBL3119958 0.75
SCHEMBL572899 0.72
SCHEMBL20496578 0.72
SCHEMBL17691375 0.72
SCHEMBL15170410 0.72
SCHEMBL19101229 0.72
SCHEMBL20499830 0.72
SCHEMBL15309922 0.72
SCHEMBL19101206 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 289 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-12232327-B2 Three-dimensional ferroelectric random-access memory (FeRAM) SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-02-18 US claimed
US-20230407477-A1 SUBSTRATE PROCESSING APPARATUS INCLUDING IMPROVED EXHAUST STRUCTURE ASM IP HOLDING B.V. (NL) 2023-12-21 US claimed
CN-117248192-A Substrate processing apparatus including improved exhaust structure ASM IP私人控股有限公司 2023-12-19 CN claimed
US-20230147421-A1 Three-Dimensional Ferroelectric Random-Access Memory (FeRAM) SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-05-11 US claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
US-20230089397-A1 AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD ASM IP HOLDING B.V. (NL) 2023-03-23 US claimed
EP-3428959-B1 METHOD FOR PRODUCING SILICON NITRIDE FILM, AND SILICON NITRIDE FILM TAIYO NIPPON SANSO CORP (JP) 2023-03-01 EP claimed
CN-108713243-B Method for producing silicon nitride film and silicon nitride film 大阳日酸株式会社 2022-11-01 CN claimed
US-20080242116-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080241388-A1 Strained metal silicon nitride films and method of forming TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080081470-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-04-03 US claimed
EP-1714315-A2 NITRIDATION OF HIGH-K DIELECTRIC FILMS Aviza Technology, Inc. (US) 2006-10-25 EP claimed
US-20060062917-A1 Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane APPLIED MATERIALS, INC. 2006-03-23 US claimed
US-20050239297-A1 Growth of high-k dielectrics by atomic layer deposition SENZAKI YOSHIHIDE 2005-10-27 US claimed
US-20050153571-A1 Nitridation of high-k dielectric films AVIZA TECHNOLOGY, INC. 2005-07-14 US claimed
WO-2005050715-A2 NITRIDATION OF HIGH-K DIELECTRIC FILMS AVIZA TECHNOLOGY, INC. (US) 2005-06-02 WO claimed
EP-1523763-A2 MOLECULAR LAYER DEPOSITION OF THIN FILMS WITH MIXED COMPONENTS Aviza Technology, Inc. (US) 2005-04-20 EP claimed
WO-2004010469-A2 ATOMIC LAYER DEPOSITION OF MULTI-METALLIC PRECURSORS AVIZA TECHNOLOGY, INC. (US) 2004-01-29 WO claimed