⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15360414 | 0.82 | — | — | |
| SCHEMBL15360962 | 0.80 | — | — | |
| SCHEMBL20500181 | 0.73 | — | — | |
| SCHEMBL641592 | 0.72 | — | — | |
| SCHEMBL20499830 | 0.71 | — | — | |
| SCHEMBL15309922 | 0.71 | — | — | |
| SCHEMBL15309891 | 0.69 | — | — | |
| SCHEMBL510702 | 0.69 | — | — | |
| SCHEMBL28339511 | 0.69 | — | — | |
| SCHEMBL28339433 | 0.69 | ALDH1A1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 161 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| US-11670512-B2 | Selective deposition on silicon containing surfaces | VERSUM MATERIALS US, LLC (US) | 2023-06-06 | — | — | US | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | claimed |
| CN-110573651-B | Formulations for depositing silicon doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2022-07-22 | — | — | CN | claimed |
| US-20220189767-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2022-06-16 | — | — | US | claimed |
| CN-110612364-B | Selective deposition on silicon-containing surfaces | 弗萨姆材料美国有限责任公司 | 2022-04-05 | — | — | CN | claimed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | claimed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | claimed |
| CN-113383108-A | Deposition of carbon-doped silicon oxide | 弗萨姆材料美国有限责任公司 | 2021-09-10 | — | — | CN | claimed |
| WO-2020072768-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2020-04-09 | — | — | WO | claimed |
| CN-110612364-A | Selective deposition on silicon-containing surfaces | 弗萨姆材料美国有限责任公司 | 2019-12-24 | — | — | CN | claimed |
| CN-110573651-A | Novel formulations for the deposition of silicon-doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2019-12-13 | — | — | CN | claimed |
| US-20180269057-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | claimed |
| WO-2018170382-A1 | SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| WO-2018170126-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-8034673-B2 | Film formation method and apparatus for forming silicon-containing insulating film doped with metal | TOKYO ELECTRON LIMITED (JP) | 2011-10-11 | — | — | US | claimed |
| US-20090263975-A1 | FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL | TOKYO ELECTRON LIMITED (JP) | 2009-10-22 | — | — | US | claimed |