Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TET2 | Q6N021 | 4/20 | 0.46 |
| ▸ | TET3 | O43151 | 1/20 | 0.46 |
| ▸ | TET1 | Q8NFU7 | 1/20 | 0.46 |
| ▸ | GRIK1 | P39086 | 1/20 | 0.45 |
| ▸ | GRIK2 | Q13002 | 1/20 | 0.45 |
| ▸ | GRM1 | Q13255 | 1/20 | 0.45 |
| ▸ | GRM2 | Q14416 | 1/20 | 0.45 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21715 | 0.75 | — | — | |
| SCHEMBL8970587 | 0.75 | SLC22A6 (0.41) | — | |
| Hydrochloric Acid SCHEMBL16756617 | 0.73 | TET2 (0.52) | TET2TET3TET1GRIK1GRIK2 | |
| SCHEMBL36381 | 0.73 | — | — | |
| SCHEMBL3045176 | 0.71 | TET2 (0.56) | TET2TET3TET1GRIK1GRIK2 | |
| SCHEMBL11241113 | 0.71 | CA2 (0.56) | CA2 | |
| SCHEMBL183599 | 0.71 | — | — | |
| Acetic Acid SCHEMBL10488044 | 0.71 | TET2 (0.50) | TET2TET3TET1GRIK1GRIK2 | |
| Potassium Ion SCHEMBL11221311 | 0.71 | CA2 (0.50) | CA2 | |
| SCHEMBL2772613 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6887649-B2 | Multi-layered resist structure and manufacturing method of semiconductor device | FUJITSU LIMITED (JP) | 2005-05-03 | — | — | US | disclosed |
| US-6677100-B2 | COPOLYMER OF AN ACRYLATE OR METHACRYLATE MONOMER HAVING A SILYL (SI), SILANOL, SILANEDIOL, SILANETRIOL, GERMANYL (GE), OR STANNOUS (SN) GROUP, AND MALEIC ANHYDRIDE; FOR EXCIMER LASER LITHOGRAPHY | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-01-13 | — | — | US | disclosed |
| US-20020192595-A1 | Multi-layered resist structure and manufacturing method of semiconductor device | FUJITSU LIMITED (JP) | 2002-12-19 | — | — | US | disclosed |
| US-20020072009-A1 | Photosensitive polymer containing Si, Ge or Sn and resist composition comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-06-13 | — | — | US | disclosed |