SCHEMBL64387

SCHEMBL64387

CC(C)(C)OC(=O)OCCN1CCCCC1

nearest known ligand 0.46

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.45
MEN1 O00255 2/20 0.45
PSMB1 P20618 1/20 0.42
PSMB5 P28074 1/20 0.42
PSMB2 P49721 1/20 0.42
HPGD P15428 1/20 0.41
NPSR1 Q6W5P4 1/20 0.41
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
POLB P06746 1/20 0.40
MAPT P10636 1/20 0.40
MAPK1 P28482 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12014431 0.98 KMT2A (0.43) KMT2AMEN1PSMB1PSMB5PSMB2
SCHEMBL18195618 0.90 CYP2D6 (0.48) KMT2AMEN1KDM4EALDH1A1POLB
SCHEMBL12014420 0.83 ATM (0.48) KMT2AHPGDKDM4EALDH1A1
SCHEMBL165769 0.83 KMT2A (0.54) KMT2AMEN1PSMB1PSMB5PSMB2
SCHEMBL12550781 0.82 ALDH1A1 (0.36) KMT2AMEN1HPGDNPSR1KDM4E
SCHEMBL167209 0.81 KMT2A (0.51) KMT2AMEN1PSMB1PSMB5PSMB2
SCHEMBL12014419 0.80 KMT2A (0.49) KMT2AMEN1HPGDNPSR1KDM4E
SCHEMBL15248890 0.79 KMT2A (0.47) KMT2AMEN1PSMB1PSMB5PSMB2
SCHEMBL19432673 0.79 KMT2A (0.47) KMT2AMEN1PSMB1PSMB5PSMB2
SCHEMBL12014424 0.78 KMT2A (0.46) KMT2AMEN1NPSR1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 451 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250372377-A1 METAL-CONTAINING FILM PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-9410951-B2 Method for producing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020098443-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-25 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020098443-A1 Amine compounds, resist compositions and patterning process PARG, EHMT1, EHMT2 KMT2A 139/4885MEN1 200/4885PSMB1 4535/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.