⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29188459 | 0.89 | — | — | |
| SCHEMBL4337693 | 0.89 | — | — | |
| SCHEMBL23375214 | 0.89 | — | — | |
| SCHEMBL28441516 | 0.89 | — | — | |
| SCHEMBL36464 | 0.87 | — | — | |
| Water SCHEMBL28535792 | 0.82 | — | — | |
| SCHEMBL1889452 | 0.75 | — | — | |
| SCHEMBL2022399 | 0.75 | — | — | |
| SCHEMBL22076973 | 0.75 | — | — | |
| SCHEMBL407672 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 132 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120076350-A | Zirconium lanthanum oxide film antiferroelectric capacitor with nonvolatile memory performance and implementation method thereof | 华东师范大学 | 2025-05-30 | — | — | CN | claimed |
| CN-116472363-A | Aerospace component with protective coating and method of making the same | 应用材料公司 | 2023-07-21 | — | — | CN | claimed |
| EP-4200622-A1 | DIELECTRIC MATERIAL FOR A HIGH VOLTAGE CAPACITOR | 3M Innovative Properties Company (US) | 2023-06-28 | — | — | EP | claimed |
| CN-109119532-B | Resistive random access memory device | 台湾积体电路制造股份有限公司 | 2023-06-20 | — | — | CN | claimed |
| US-20180375022-A1 | SWITCHING LAYER SCHEME TO ENHANCE RRAM PERFORMANCE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2018-12-27 | — | — | US | claimed |
| US-10164182-B1 | Switching layer scheme to enhance RRAM performance | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2018-12-25 | — | — | US | claimed |
| EP-3068517-A1 | COMPOSITIONS OF LEAN NOX TRAP | SDCMaterials, Inc. (US) | 2016-09-21 | — | — | EP | claimed |
| CN-105960272-A | High surface area catalyst | SDC材料公司 | 2016-09-21 | — | — | CN | claimed |
| WO-2016130926-A2 | ZONED CATALYTIC CONVERTERS FOR GASOLINE ENGINES WITH REDUCED RHODIUM CONTENT | SDCmaterials, Inc. (US) | 2016-08-18 | — | — | WO | claimed |
| CN-105848756-A | Compositions of lean NOx trap | SDC材料公司 | 2016-08-10 | — | — | CN | claimed |
| EP-3049176-A1 | HIGH SURFACE AREA CATALYST | SDCMaterials, Inc. (US) | 2016-08-03 | — | — | EP | claimed |
| WO-2015061482-A1 | COMPOSITIONS OF LEAN NOX TRAP | SDCmaterials, Inc. (US) | 2015-04-30 | — | — | WO | claimed |
| WO-2015042598-A1 | HIGH SURFACE AREA CATALYST | SDCmaterials, Inc. (US) | 2015-03-26 | — | — | WO | claimed |
| US-7544273-B2 | Deposition methods and stacked film formed thereby | SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) | 2009-06-09 | — | — | US | claimed |
| US-20040067386-A1 | Laminated film and method forming film | INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION (JP) | 2004-04-08 | — | — | US | claimed |
| EP-1375697-A1 | LAMINATED FILM AND METHOD OF FORMING FILM | Sumitomo Electric Industries, Ltd. (JP) | 2004-01-02 | — | — | EP | claimed |
| US-20250311465-A1 | HIGH PERFORMANCE IMAGE SENSOR | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-02 | — | — | US | disclosed |
| US-12414400-B2 | High performance image sensor | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-09 | — | — | US | disclosed |
| US-20040067386-A1 | Laminated film and method forming film | INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION (JP) | 2004-04-08 | — | — | US | disclosed |
| EP-1375697-A1 | LAMINATED FILM AND METHOD OF FORMING FILM | Sumitomo Electric Industries, Ltd. (JP) | 2004-01-02 | — | — | EP | disclosed |