SCHEMBL6443661

SCHEMBL6443661

FC(F)(F)F.[H+]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL444758 0.89
SCHEMBL14721708 0.89
SCHEMBL24604 0.89
SCHEMBL729481 0.80
SCHEMBL3133499 0.80
SCHEMBL2043839 0.80
Helium SCHEMBL7068545 0.80
Hydrochloric Acid SCHEMBL10488807 0.80
SCHEMBL2044940 0.80
Ammonia Solution, Strong SCHEMBL9317182 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6613687-B2 Reverse reactive ion patterning of metal oxide films LEXMARK INTERNATIONAL, INC. 2003-09-02 US claimed
US-20020142609-A1 Reverse reactive ion patterning of metal oxide films FUNAI ELECTRIC CO., LTD (JP) 2002-10-03 US claimed
US-6436740-B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps HANNSTAR DISPLAY CORP. (TW) 2002-08-20 US claimed
US-6387740-B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps HANNSTAR DISPLAY CORP. (TW) 2002-05-14 US claimed
CN-117160263-B Preparation device and method of electronic mixed gas 安瑞森(宿迁)电子材料有限公司 2024-12-17 CN disclosed
CN-112108022-B Preparation device and method of electronic mixed gas 中船(邯郸)派瑞特种气体股份有限公司 2024-09-03 CN disclosed
CN-117160263-A Preparation device and method of electronic mixed gas 安瑞森(宿迁)电子材料有限公司 2023-12-05 CN disclosed
US-6924206-B2 Method of manufacturing a semiconductor capacitive element in a semiconductor device NEC ELECTRONICS CORPORATION (JP) 2005-08-02 US disclosed
US-6849920-B2 Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same NEC ELECTRONICS CORPORATION (JP) 2005-02-01 US disclosed
US-20040262770-A1 Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same NEC ELECTRONICS CORP. (JP) 2004-12-30 US disclosed
CN-1127135-C Method for manufacturing horizontal trench capacitor and dynamic random access memory cell array WORLD ADVANCED INTEGRATED CIRCUIT CO LTD (CN) 2003-11-05 CN disclosed
US-20030201484-A1 Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same NEC ELECTRONICS CORPORATION (JP) 2003-10-30 US disclosed
US-4688069-A Isolation for high density integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1987-08-18 US disclosed
US-4661832-A Total dielectric isolation for integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1987-04-28 US disclosed
US-4502913-A Total dielectric isolation for integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1985-03-05 US disclosed
US-4454647-A Isolation for high density integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1984-06-19 US disclosed
US-4454646-A Isolation for high density integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1984-06-19 US disclosed
EP-0104079-A2 Integrated circuit contact structure International Business Machines Corporation (US) 1984-03-28 EP disclosed
EP-0073370-A2 Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits International Business Machines Corporation (US) 1983-03-09 EP disclosed
EP-0072966-A2 Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits International Business Machines Corporation (US) 1983-03-02 EP disclosed