SCHEMBL645455

SCHEMBL645455

CS(C)(OS(=O)(=O)C(F)(F)F)c1cccc2ccccc12

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
CA9 Q16790 1/20 0.46
F2 P00734 3/20 0.41
PRSS1 P07477 3/20 0.41
PRSS2 P07478 3/20 0.41
PRSS3 P35030 3/20 0.41
PGR P06401 1/20 0.40
RORA P35398 1/20 0.40
RORC P51449 1/20 0.40
NR1H2 P55055 1/20 0.40
NR1H4 Q96RI1 1/20 0.40
HTR6 P50406 1/20 0.40
HCRTR1 O43613 1/20 0.39
KEAP1 Q14145 2/20 0.39
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
KDM4E B2RXH2 1/20 0.39
ALDH1A1 P00352 1/20 0.39
HSD17B10 Q99714 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3114242 0.84 CA1 (0.41) CA1CA2CA9F2PRSS1
SCHEMBL66198 0.84 CA1 (0.49) CA1CA2CA9F2PRSS1
SCHEMBL3114547 0.83 CA1 (0.40) CA1CA2CA9F2PRSS1
SCHEMBL2519450 0.82 CA1 (0.44) CA1CA2CA9F2PRSS1
SCHEMBL2515162 0.80 CYP1A2 (0.39) MEN1KMT2AKDM4E
SCHEMBL36035 0.80 CA1 (0.45) CA1CA2CA9F2PRSS1
SCHEMBL547977 0.80 CA1 (0.45) CA1CA2CA9F2PRSS1
SCHEMBL6564923 0.79 CA1 (0.41) CA1CA2CA9F2PRSS1
SCHEMBL2517293 0.76 SLC22A12 (0.41) ALDH1A1
SCHEMBL2519055 0.75 CTSB (0.41) MEN1KMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2021106537-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-06-03 WO disclosed
CN-110850680-A Curable composition, display element, and method for forming cured film JSR株式会社 2020-02-28 CN disclosed
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-9046769-B2 Pattern-forming method, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-20140371466-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2014-12-18 US disclosed
US-8859191-B2 Pattern-forming method, and composition for forming resist underlayer film JSR CORPORATION (JP) 2014-10-14 US disclosed
US-8722306-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-05-13 US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-8334338-B2 Composition for forming resist lower layer film JSR CORPORATION (JP) 2012-12-18 US disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
US-20010014427-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-08-16 US disclosed
US-6242161-B1 ABSORPTION COATINGS USING COPOLYMERS JSR CORPORATION (JP) 2001-06-05 US disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6187504-B1 PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION JSR CORPORATION (JP) 2001-02-13 US disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0849634-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-06-24 EP disclosed