SCHEMBL36035

SCHEMBL36035

O=S(=O)(OS(c1ccccc1)(c1cccc2ccccc12)c1cccc2ccccc12)C(F)(F)F

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.45
CA2 P00918 1/20 0.45
CA9 Q16790 1/20 0.45
RORA P35398 1/20 0.42
RORC P51449 1/20 0.42
NR1H2 P55055 1/20 0.42
NR1H4 Q96RI1 1/20 0.42
HTR6 P50406 2/20 0.42
PGR P06401 1/20 0.40
RECQL P46063 1/20 0.40
F2 P00734 3/20 0.39
PRSS1 P07477 3/20 0.39
PRSS2 P07478 3/20 0.39
PRSS3 P35030 3/20 0.39
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
TSHR P16473 1/20 0.37
KEAP1 Q14145 1/20 0.36
NFE2L2 Q16236 1/20 0.36
SCN1A P35498 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547977 0.97 CA1 (0.45) CA1CA2CA9RORARORC
SCHEMBL66198 0.92 CA1 (0.49) CA1CA2CA9RORARORC
SCHEMBL1593372 0.88 RORA (0.41) CA1CA2CA9RORARORC
SCHEMBL270056 0.86 RORA (0.40) CA1CA2CA9RORARORC
SCHEMBL3680642 0.84 RORA (0.40) CA1CA2CA9RORARORC
SCHEMBL3139801 0.83 RORA (0.39) CA1CA2CA9RORARORC
SCHEMBL3127145 0.83 RORA (0.39) CA1CA2CA9RORARORC
SCHEMBL645455 0.80 CA1 (0.46) CA1CA2CA9RORARORC
SCHEMBL37033 0.80 HTR6 (0.42) CA1CA2CA9NR1H2HTR6
SCHEMBL3141282 0.78 RORA (0.43) CA1CA2CA9RORARORC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 334 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4714990-A1 COPOLYMER, POLYMER FOR WATER-REPELLENT AGENT, COMPOSITION FOR FORMING WATER-REPELLENT FILM, RESIN FILM, AND METHOD FOR FORMING RESIST PATTERN Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
EP-4714988-A1 FLUORINE-CONTAINING POLYMER, COMPOSITION FOR FORMING FLUORINE-CONTAINING RESIN FILM, FLUORINE-CONTAINING RESIN FILM, COMPOSITION FOR FORMING RESIST PATTERN, METHOD FOR FORMING RESIST PATTERN, COMPOSITION FOR FORMING RESIST UPPER LAYER FILM, METHOD FOR DECOMPOSING FLUORINE-CONTAINING POLYMER, FLUORINE-CONTAINING POLYMERIZABLE MONOMER, COMPOUND, AND METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMERIZABLE MONOMER Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
WO-2024248136-A1 COPOLYMER, POLYMER FOR WATER-REPELLENT AGENT, COMPOSITION FOR FORMING WATER-REPELLENT FILM, RESIN FILM, AND METHOD FOR FORMING RESIST PATTERN セントラル硝子株式会社 2024-12-05 WO disclosed
WO-2024248135-A1 FLUORINE-CONTAINING POLYMER, COMPOSITION FOR FORMING FLUORINE-CONTAINING RESIN FILM, FLUORINE-CONTAINING RESIN FILM, COMPOSITION FOR FORMING RESIST PATTERN, METHOD FOR FORMING RESIST PATTERN, COMPOSITION FOR FORMING RESIST UPPER LAYER FILM, METHOD FOR DECOMPOSING FLUORINE-CONTAINING POLYMER, FLUORINE-CONTAINING POLYMERIZABLE MONOMER, COMPOUND, AND METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMERIZABLE MONOMER セントラル硝子株式会社 2024-12-05 WO disclosed
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
EP-2093213-B1 Positive resist composition and method of forming a resist pattern using the same TOKYO OHKA KOGYO CO LTD (JP) 2017-10-04 EP disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-20090042130-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO. LTD (JP) 2009-02-12 US disclosed
US-7488568-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-10 US disclosed
US-20090023102-A1 POSITIVE RESIST COMPOSITION FOR FORMING THICK-FILM RESIST, THICK-FILM RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-01-22 US disclosed
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed
US-20080090171-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 CA1 54/4885CA2 92/4885CA9 41/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 CA1 78/4885CA2 266/4885CA9 259/4885
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN C1R, CYP1B1, C1S CA1 942/4885CA2 2977/4885CA9 1712/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.