SCHEMBL645536

SCHEMBL645536

COc1cccc([SiH2]C[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.48
CA12 O43570 2/20 0.41
CA1 P00915 2/20 0.41
CA2 P00918 2/20 0.41
CA14 Q9ULX7 2/20 0.41
CA4 P22748 1/20 0.41
CA7 P43166 1/20 0.41
CA9 Q16790 1/20 0.41
NFE2L2 Q16236 5/20 0.40
MAPK1 P28482 3/20 0.40
KDM4E B2RXH2 2/20 0.38
ALDH1A1 P00352 2/20 0.38
TSHR P16473 2/20 0.38
POLB P06746 2/20 0.38
LMNA P02545 1/20 0.38
TP53 P04637 1/20 0.38
CYP3A4 P08684 1/20 0.38
MAPT P10636 1/20 0.38
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702408 0.88 SMN1; SMN2 (0.48) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL27518064 0.86 SMN1; SMN2 (0.47) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL703492 0.85 SMN1; SMN2 (0.50) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL647735 0.85 SMN1; SMN2 (0.50) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL7804610 0.83 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5406992 0.83 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5412961 0.83 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5415008 0.83 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5418144 0.83 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5423963 0.82 SMN1; SMN2 (0.43) SMN1; SMN2CA12CA1CA2CA14

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7500397-B2 Activated chemical process for enhancing material properties of dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-03-10 US claimed
US-20080199977-A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-21 US claimed
EP-1959485-A2 Activated chemical process for enhancing material properties of dielectric films Air Products and Chemicals, Inc. (US) 2008-08-20 EP claimed
US-10474032-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-12 US disclosed
US-9437431-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-09-06 US disclosed
EP-1720075-B1 Coating compositions ROHM & HAAS ELECT MAT (US) 2016-03-02 EP disclosed
US-20150072290-A1 COATING COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-03-12 US disclosed
US-8911927-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-12-16 US disclosed
US-8889344-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-11-18 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed