SCHEMBL702408

SCHEMBL702408

COc1cccc([SiH2]CC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.48
CA12 O43570 2/20 0.41
CA1 P00915 2/20 0.41
CA2 P00918 2/20 0.41
CA14 Q9ULX7 2/20 0.41
CA4 P22748 1/20 0.41
CA7 P43166 1/20 0.41
CA9 Q16790 1/20 0.41
NFE2L2 Q16236 5/20 0.40
MAPK1 P28482 3/20 0.40
KDM4E B2RXH2 3/20 0.39
MAPT P10636 2/20 0.39
HSD17B10 Q99714 2/20 0.39
ALDH1A1 P00352 2/20 0.38
TSHR P16473 2/20 0.38
POLB P06746 2/20 0.38
LMNA P02545 1/20 0.38
TP53 P04637 1/20 0.38
CYP3A4 P08684 1/20 0.38
HPGD P15428 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL647735 0.92 SMN1; SMN2 (0.50) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL703492 0.92 SMN1; SMN2 (0.50) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL7804610 0.91 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA14
Ammonia Solution, Strong SCHEMBL28823190 0.89 SMN1; SMN2 (0.43) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL21066749 0.89 SMN1; SMN2 (0.43) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL645536 0.88 SMN1; SMN2 (0.48) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5410345 0.88 SMN1; SMN2 (0.42) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5420968 0.88 SMN1; SMN2 (0.42) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5404842 0.88 SMN1; SMN2 (0.42) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5414911 0.88 SMN1; SMN2 (0.42) SMN1; SMN2CA12CA1CA2CA14

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-20100041234-A1 Process For Restoring Dielectric Properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-02-18 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090298671-A1 Compositions for Preparing Low Dielectric Materials Containing Solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-12-03 US disclosed
US-7500397-B2 Activated chemical process for enhancing material properties of dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-03-10 US disclosed
US-7482676-B2 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-01-27 US disclosed
US-20080264672-A1 Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-10-30 US disclosed
US-20080199977-A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-21 US disclosed
US-20060183055-A1 Method for defining a feature on a substrate VERSUM MATERIALS US, LLC 2006-08-17 US disclosed
EP-1691410-A2 Method for defining a feature on a substrate Air Products and Chemicals, Inc. (US) 2006-08-16 EP disclosed
EP-1583141-A2 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-10-05 EP disclosed
EP-1577935-A2 Compositions for preparing low dielectric materials containing solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-09-21 EP disclosed
US-20050196974-A1 Compositions for preparing low dielectric materials containing solvents VERSUM MATERIALS US, LLC 2005-09-08 US disclosed
US-20050196535-A1 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. 2005-09-08 US disclosed
EP-1561841-A2 Cleaning CVD Chambers following deposition of porogen-containing materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-08-10 EP disclosed
US-20050161060-A1 Cleaning CVD chambers following deposition of porogen-containing materials AIR PRODUCTS AND CHEMICALS, INC. 2005-07-28 US disclosed
US-20040048960-A1 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. 2004-03-11 US disclosed
EP-1376671-A1 Compositions for preparing materials with a low dielectric constant AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-01-02 EP disclosed