SCHEMBL645691

SCHEMBL645691

CCCCO[Si](F)(OCCCC)OCCCC

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.41
ADRB1 P08588 1/20 0.41
ADRB3 P13945 1/20 0.41
TSHR P16473 5/20 0.36
CYP3A4 P08684 3/20 0.36
ALDH1A1 P00352 1/20 0.35
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
LMNA P02545 1/20 0.33
ATM Q13315 1/20 0.32
THRB P10828 1/20 0.32
CYP2D6 P10635 2/20 0.31
CYP1A2 P05177 1/20 0.31
CYP19A1 P11511 1/20 0.31
CYP2C9 P11712 1/20 0.31
CYP2C19 P33261 1/20 0.31
HPGD P15428 2/20 0.30
SMN1; SMN2 Q16637 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31211141 0.83 CES1 (0.38) TSHRCA1CA2THRB
SCHEMBL29165694 0.83 CES1 (0.38) TSHRCA1CA2THRB
SCHEMBL9217464 0.82 ADRB2 (0.41) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL918859 0.82
SCHEMBL646707 0.81
SCHEMBL23701018 0.80
SCHEMBL25328425 0.80 ADRB2 (0.39) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL28564758 0.78 GBA1 (0.38) TSHRCA1CA2THRB
SCHEMBL28310552 0.78 GBA1 (0.38) TSHRCA1CA2THRB
SCHEMBL49555 0.75 ADRB2 (0.45) ADRB2ADRB1ADRB3TSHRCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 177 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8216649-B2 Liquid crystal aligning agent, method of producing a liquid crystal alignment film and liquid crystal display device JSR CORPORATION (JP) 2012-07-10 US claimed
US-5334552-A Forming wiring layer over dielectric film on substrate surface covering with silicon dioxide film, then forming fluorine-containing silicon dioxide and flattening films, dry etching of flattening film NEC CORPORATION (JP) 1994-08-02 US claimed
CN-118613545-A Mixed composition, film obtained by curing the mixed composition, and glass having the film 住友化学株式会社 2024-09-06 CN disclosed
WO-2023145301-A1 MIXED COMPOSITION, CURED FILM OF SAID MIXED COMPOSITION, AND GLASS HAVING SAID FILM 住友化学株式会社 2023-08-03 WO disclosed
EP-3239111-B1 CURABLE COMPOSITION, TRANSFER FILM, FRONT PLATE OF IMAGE DISPLAY DEVICE, FRONT PLATE-INTEGRATED SENSOR, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD FOR FRONT PLATE OF IMAGE DISPLAY DEVICE FUJIFILM CORP (JP) 2021-02-17 EP disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
EP-3239111-A1 CURABLE COMPOSITION, TRANSFER FILM, FRONT PLATE OF IMAGE DISPLAY DEVICE, FRONT PLATE-INTEGRATED SENSOR, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD FOR FRONT PLATE OF IMAGE DISPLAY DEVICE FUJIFILM Corporation (JP) 2017-11-01 EP disclosed
US-9268451-B2 Transfer film, manufacturing method of capacitive input device, capacitive input device, and image display device including the same FUJIFILM CORPORATION (JP) 2016-02-23 US disclosed
EP-2182405-B1 LIQUID CRYSTAL ALIGNING AGENT, METHOD FOR PRODUCING LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY DEVICE JSR CORP (JP) 2016-01-13 EP disclosed
US-9050624-B2 Film-forming composition for imprinting, method of manufacturing a structure, and structure TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-09 US disclosed
WO-2015064773-A1 PHOTOCATALYTIC COATING AND METHOD OF MAKING SAME NITTO DENKO CORPORATION (JP) 2015-05-07 WO disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
US-5468682-A Method of manufacturing semiconductor device using the abrasive NEC CORPORATION (JP) 1995-11-21 US disclosed
US-5399529-A Process for producing semiconductor devices NEC CORPORATION (JP) 1995-03-21 US disclosed
US-5334552-A Forming wiring layer over dielectric film on substrate surface covering with silicon dioxide film, then forming fluorine-containing silicon dioxide and flattening films, dry etching of flattening film NEC CORPORATION (JP) 1994-08-02 US disclosed