⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL645691 | 0.81 | ADRB2 (0.41) | — | |
| SCHEMBL31415923 | 0.80 | — | — | |
| SCHEMBL25327708 | 0.78 | CA1 (0.32) | — | |
| SCHEMBL23701045 | 0.78 | — | — | |
| SCHEMBL27576729 | 0.75 | — | — | |
| SCHEMBL138265 | 0.72 | — | — | |
| SCHEMBL2114336 | 0.72 | CA1 (0.30) | — | |
| SCHEMBL23873 | 0.72 | CA1 (0.30) | — | |
| SCHEMBL31211141 | 0.72 | CES1 (0.38) | — | |
| SCHEMBL3481796 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119593195-A | Hydrophilic material, hydrophobic material, preparation method of hydrophilic material and hydrophobic material, and gas-liquid separation filter device with hydrophilic material and hydrophobic material | 中科瑞丽分离科技无锡有限公司 | 2025-03-11 | — | — | CN | claimed |
| US-8216649-B2 | Liquid crystal aligning agent, method of producing a liquid crystal alignment film and liquid crystal display device | JSR CORPORATION (JP) | 2012-07-10 | — | — | US | claimed |
| US-7125912-B2 | Doped sol-gel materials and method of manufacture utilizing reduced mixing temperatures | SIMAX TECHNOLOGIES, INC. (US) | 2006-10-24 | — | — | US | claimed |
| US-20030078153-A1 | Doped sol-gel materials and method of manufacture utilizing reduced mixing temperatures | SIMAX TECHNOLOGIES, INC. | 2003-04-24 | — | — | US | claimed |
| US-5334552-A | Forming wiring layer over dielectric film on substrate surface covering with silicon dioxide film, then forming fluorine-containing silicon dioxide and flattening films, dry etching of flattening film | NEC CORPORATION (JP) | 1994-08-02 | — | — | US | claimed |
| CN-119593195-A | Hydrophilic material, hydrophobic material, preparation method of hydrophilic material and hydrophobic material, and gas-liquid separation filter device with hydrophilic material and hydrophobic material | 中科瑞丽分离科技无锡有限公司 | 2025-03-11 | — | — | CN | disclosed |
| CN-118613545-A | Mixed composition, film obtained by curing the mixed composition, and glass having the film | 住友化学株式会社 | 2024-09-06 | — | — | CN | disclosed |
| WO-2023145301-A1 | MIXED COMPOSITION, CURED FILM OF SAID MIXED COMPOSITION, AND GLASS HAVING SAID FILM | 住友化学株式会社 | 2023-08-03 | — | — | WO | disclosed |
| EP-3239111-B1 | CURABLE COMPOSITION, TRANSFER FILM, FRONT PLATE OF IMAGE DISPLAY DEVICE, FRONT PLATE-INTEGRATED SENSOR, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD FOR FRONT PLATE OF IMAGE DISPLAY DEVICE | FUJIFILM CORP (JP) | 2021-02-17 | — | — | EP | disclosed |
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| EP-3239111-A1 | CURABLE COMPOSITION, TRANSFER FILM, FRONT PLATE OF IMAGE DISPLAY DEVICE, FRONT PLATE-INTEGRATED SENSOR, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD FOR FRONT PLATE OF IMAGE DISPLAY DEVICE | FUJIFILM Corporation (JP) | 2017-11-01 | — | — | EP | disclosed |
| US-9268451-B2 | Transfer film, manufacturing method of capacitive input device, capacitive input device, and image display device including the same | FUJIFILM CORPORATION (JP) | 2016-02-23 | — | — | US | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |
| EP-1058274-A1 | Composition for film formation and material for insulating film formation | JSR Corporation (JP) | 2000-12-06 | — | — | EP | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| US-5744378-A | Method for fabricating a semiconductor device having multilevel interconnections | NEC CORPORATION (JP) | 1998-04-28 | — | — | US | disclosed |
| US-5468682-A | Method of manufacturing semiconductor device using the abrasive | NEC CORPORATION (JP) | 1995-11-21 | — | — | US | disclosed |
| US-5405805-A | Method for forming interconnect structure, insulating films and surface protective films of semiconductor device | NEC CORPORATION (JP) | 1995-04-11 | — | — | US | disclosed |
| US-5334552-A | Forming wiring layer over dielectric film on substrate surface covering with silicon dioxide film, then forming fluorine-containing silicon dioxide and flattening films, dry etching of flattening film | NEC CORPORATION (JP) | 1994-08-02 | — | — | US | disclosed |