SCHEMBL645886

SCHEMBL645886

CO[Si](C)(OC)[Si](OC)(OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL646200 0.77
SCHEMBL4199698 0.73
SCHEMBL216672 0.71
SCHEMBL1405545 0.70
SCHEMBL247770 0.67
SCHEMBL645481 0.67
SCHEMBL9551529 0.64
SCHEMBL26667666 0.64
SCHEMBL26667653 0.64
SCHEMBL11144940 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 222 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1482070-B1 MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS AIR PROD & CHEM (US) 2015-11-11 EP claimed
US-20040241463-A1 Mechanical enhancer additives for low dielectric films VERSUM MATERIALS US, LLC 2004-12-02 US claimed
EP-1482070-A1 Mechanical enhancer additives for low dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-12-01 EP claimed
US-12346026-B2 Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device FUJIFILM CORPORATION (JP) 2025-07-01 US disclosed
US-20220252985-A1 COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-08-11 US disclosed
WO-2021106537-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-06-03 WO disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10234762-B2 Pattern-forming method JSR CORPORATION (JP) 2019-03-19 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20170003592-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-01-05 US disclosed
US-5633312-A Process for preparing polyorganosilane TOSHIBA SILICONE CO., LTD. (JP) 1997-05-27 US disclosed
US-5489662-A Process for the preparation of organosilicon polymer TOSHIBA SILICONE CO., LTD. (JP) 1996-02-06 US disclosed
EP-0669363-A2 Process for preparing polyorganosilane TOSHIBA SILICONE CO., LTD. (JP) 1995-08-30 EP disclosed
EP-0641820-A1 Process for the preparation of organosilicon polymer TOSHIBA SILICONE CO., LTD. (JP) 1995-03-08 EP disclosed
US-5250646-A Reacting disilane with organometallic compound WACKER-CHEMIE GMBH (DE) 1993-10-05 US disclosed
US-5166287-A Reaction of a disilane to form polysiloxanes WACKER-CHEMIE GMBH (DE) 1992-11-24 US disclosed
EP-0486946-A2 Process for the production of metallopolysilanes and their use Wacker-Chemie GmbH (DE) 1992-05-27 EP disclosed
EP-0463624-A2 Process for preparing organopolysilanes WACKER-CHEMIE GMBH (DE) 1992-01-02 EP disclosed
US-4395562-A FROM ALKYL ALLENE AND A DISILANE IN PRESENCE OF PHOSPHINE COMPLEX OF A TRANSITION METAL CHISSO CORPORATION (JP) 1983-07-26 US disclosed