SCHEMBL646200

SCHEMBL646200

CO[Si](C)(OC)[Si](C)(OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4199698 0.84
SCHEMBL645481 0.77
SCHEMBL645886 0.77
SCHEMBL26667653 0.74
SCHEMBL28152 0.71
SCHEMBL9316013 0.68
SCHEMBL35033 0.67
SCHEMBL479251 0.67
SCHEMBL5696436 0.67
SCHEMBL18010451 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 296 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111871393-B Mesoporous organic silicon hollow sphere synthesized by double-template method and adsorption application thereof 常州大学 2023-04-11 CN claimed
CN-111871393-A Mesoporous organic silicon hollow sphere synthesized by double-template method and adsorption application thereof 常州大学 2020-11-03 CN claimed
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US claimed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US claimed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US claimed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US claimed
EP-0298469-B1 PROCESS OF MAKING HIGHLY POROUS GLASS-CERAMIC BODIES WACKER-CHEMIE GMBH (DE) 1992-09-16 EP claimed
US-5130400-A Reaction of alkoxysilane and water WACKER-CHEMIE GMBH (DE) 1992-07-14 US claimed
US-5015605-A Heating A Molded Part Containing An Organopolysiloxane In A Nonoxidizing Or Vacuum Atmosphere WACKER-CHEMIE GMBH (DE) 1991-05-14 US claimed
EP-0403848-A2 Process of preparing spherical, monodisperse organopolysiloxanes or siliciumcarbides WACKER-CHEMIE GMBH (DE) 1990-12-27 EP claimed
EP-0298469-A2 Process of making highly porous glass-ceramic bodies WACKER-CHEMIE GMBH (DE) 1989-01-11 EP claimed
JP-5059183-A None JP disclosed
JP-4039357-A None JP disclosed
US-12346026-B2 Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device FUJIFILM CORPORATION (JP) 2025-07-01 US disclosed
WO-2024053557-A1 NON-AQUEOUS ELECTROLYTIC SOLUTION AND BATTERY 株式会社日本触媒 2024-03-14 WO disclosed
EP-0303908-A2 Thermosetting organopolyiloxane composition WACKER-CHEMIE GMBH (DE) 1989-02-22 EP disclosed
EP-0298469-A2 Process of making highly porous glass-ceramic bodies WACKER-CHEMIE GMBH (DE) 1989-01-11 EP disclosed
EP-0281964-A1 Process for the production of silicon carbide fibres Wacker-Chemie GmbH (DE) 1988-09-14 EP disclosed
EP-0281154-A2 Process for producing a siliconcarbide protective coating WACKER-CHEMIE GMBH (DE) 1988-09-07 EP disclosed
EP-0214664-A2 Process for the preparation of organopolysilanes and use of the organopolysilanes thus obtained WACKER-CHEMIE GMBH (DE) 1987-03-18 EP disclosed