Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 3/20 | 0.38 |
| ▸ | RAB9A | P51151 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | FABP4 | P15090 | 1/20 | 0.37 |
| ▸ | CCR8 | P51685 | 1/20 | 0.37 |
| ▸ | SLC40A1 | Q9NP59 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.36 |
| ▸ | PTPRZ1 | P23471 | 1/20 | 0.36 |
| ▸ | GPR84 | Q9NQS5 | 1/20 | 0.36 |
| ▸ | HTR2C | P28335 | 1/20 | 0.35 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.35 |
| ▸ | HTR2B | P41595 | 1/20 | 0.35 |
| ▸ | MRGPRX4 | Q96LA9 | 1/20 | 0.35 |
| ▸ | PLAU | P00749 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL7793121 | 0.94 | PLAU (0.38) | NPC1RAB9AMAPTSMN1; SMN2L3MBTL1 | |
| SCHEMBL3149496 | 0.90 | POLB (0.37) | NPC1RAB9AMAPTSMN1; SMN2L3MBTL1 | |
| SCHEMBL3163897 | 0.89 | POLB (0.36) | NPC1RAB9AMAPTSMN1; SMN2L3MBTL1 | |
| SCHEMBL3872813 | 0.87 | MAPT (0.41) | NPC1RAB9AMAPTSMN1; SMN2L3MBTL1 | |
| Trifluoromethanesulfonic Acid SCHEMBL646916 | 0.86 | HTT (0.34) | MAPTLMNAHPGDHTT | |
| Trifluoromethanesulfonic Acid SCHEMBL31168289 | 0.86 | HTT (0.34) | MAPTLMNAHPGDHTT | |
| Trifluoromethanesulfonic Acid SCHEMBL31168250 | 0.86 | TSHR (0.44) | MAPTSMN1; SMN2POLBFABP4LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL36662 | 0.86 | TSHR (0.44) | MAPTSMN1; SMN2POLBFABP4LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL646424 | 0.84 | HTT (0.35) | NPC1RAB9ALMNAHPGDHTT | |
| Trifluoromethanesulfonic Acid SCHEMBL703652 | 0.84 | KMT2A (0.42) | L3MBTL1LMNAHTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2021106537-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2021-06-03 | — | — | WO | disclosed |
| US-9170492-B2 | Silicon-containing film-forming composition, silicon-containing film, and pattern forming method | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9140985-B2 | — | — | 2015-09-22 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-8450045-B2 | Pattern forming method | JSR CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20130084394-A1 | INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL | JSR CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20120183902-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120122036-A1 | PATTERN FORMING METHOD | JSR CORPORATION (JP) | 2012-05-17 | — | — | US | disclosed |
| US-8173348-B2 | Method of forming pattern and composition for forming of organic thin-film for use therein | JSR CORPORATION (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8119324-B2 | Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film | JSR CORPORATION (JP) | 2012-02-21 | — | — | US | disclosed |
| EP-1162506-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-12 | — | — | EP | disclosed |
| US-6322949-B2 | SULFONIUM COMPOUND AS PHOTOACID GENERATOR | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-11-27 | — | — | US | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| US-6242161-B1 | ABSORPTION COATINGS USING COPOLYMERS | JSR CORPORATION (JP) | 2001-06-05 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |