Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 7/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.44 |
| ▸ | LMNA | P02545 | 6/20 | 0.44 |
| ▸ | HTT | P42858 | 4/20 | 0.44 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.44 |
| ▸ | HPGD | P15428 | 5/20 | 0.38 |
| ▸ | MAPT | P10636 | 4/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.38 |
| ▸ | ALOX12 | P18054 | 2/20 | 0.38 |
| ▸ | NTSR1 | P30989 | 1/20 | 0.38 |
| ▸ | CCR6 | P51684 | 1/20 | 0.38 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 2/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.37 |
| ▸ | GAA | P10253 | 2/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.37 |
| ▸ | PKM | P14618 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL31168250 | 1.00 | TSHR (0.44) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL6563968 | 0.93 | ALDH1A1 (0.39) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168292 | 0.91 | LMNA (0.36) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL648122 | 0.91 | LMNA (0.36) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL703652 | 0.91 | KMT2A (0.42) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL646916 | 0.91 | HTT (0.34) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168289 | 0.91 | HTT (0.34) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL5972623 | 0.90 | ALDH1A1 (0.35) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL36280 | 0.90 | SLC2A1 (0.42) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL29354733 | 0.90 | SLC2A1 (0.42) | TSHRALDH1A1LMNAHTTMCOLN3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 384 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2021106537-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2021-06-03 | — | — | WO | disclosed |
| EP-2584409-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO LTD (JP) | 2021-04-28 | — | — | EP | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| EP-2093213-B1 | Positive resist composition and method of forming a resist pattern using the same | TOKYO OHKA KOGYO CO LTD (JP) | 2017-10-04 | — | — | EP | disclosed |
| US-9618842-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618843-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9494860-B2 | Resist composition, method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| EP-2088466-B1 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO LTD (JP) | 2016-10-26 | — | — | EP | disclosed |
| EP-2073060-B1 | Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO LTD (JP) | 2016-08-24 | — | — | EP | disclosed |
| US-9250531-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| US-6242161-B1 | ABSORPTION COATINGS USING COPOLYMERS | JSR CORPORATION (JP) | 2001-06-05 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |