⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5567518 | 0.90 | — | — | |
| SCHEMBL18935710 | 0.85 | — | — | |
| SCHEMBL9010753 | 0.80 | — | — | |
| SCHEMBL63969 | 0.77 | — | — | |
| SCHEMBL1089117 | 0.74 | SLC7A5 (0.30) | — | |
| SCHEMBL383998 | 0.74 | MEN1 (0.31) | — | |
| SCHEMBL6831264 | 0.73 | — | — | |
| SCHEMBL35897 | 0.67 | — | — | |
| SCHEMBL64899 | 0.67 | HTT (0.43) | — | |
| SCHEMBL27562245 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1527 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| EP-1830228-B1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-08-05 | — | — | EP | claimed |
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6660447-B2 | Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-09 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4664197-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-17 | — | — | EP | disclosed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-0417557-B1 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AG (DE) | 1996-12-11 | — | — | EP | disclosed |
| EP-0444493-B1 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AG (DE) | 1996-11-20 | — | — | EP | disclosed |
| US-5424166-A | Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1995-06-13 | — | — | US | disclosed |
| US-5338641-A | Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound | HOECHST AKTIENGESELLSCHAFT (DE) | 1994-08-16 | — | — | US | disclosed |
| EP-0444493-A2 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-09-04 | — | — | EP | disclosed |
| EP-0417557-A2 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-03-20 | — | — | EP | disclosed |