Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 2/20 | 0.43 |
| ▸ | TP53 | P04637 | 2/20 | 0.43 |
| ▸ | NPC1 | O15118 | 1/20 | 0.43 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.43 |
| ▸ | S1PR4 | O95977 | 1/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.43 |
| ▸ | LMNA | P02545 | 1/20 | 0.43 |
| ▸ | POLB | P06746 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 1/20 | 0.43 |
| ▸ | HPGD | P15428 | 1/20 | 0.43 |
| ▸ | XBP1 | P17861 | 1/20 | 0.43 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.43 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.43 |
| ▸ | AGTR1 | P30556 | 1/20 | 0.43 |
| ▸ | RAB9A | P51151 | 1/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.43 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.43 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.43 |
| ▸ | FAAH | O00519 | 2/20 | 0.34 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL66144 | 0.93 | FAAH (0.43) | HTTTP53NPC1S1PR2S1PR4 | |
| SCHEMBL6931623 | 0.91 | FAAH (0.46) | FAAHENPP2CA2 | |
| SCHEMBL9010763 | 0.91 | FAAH (0.46) | FAAHENPP2CA2 | |
| SCHEMBL6932972 | 0.91 | FAAH (0.46) | FAAHENPP2CA2 | |
| SCHEMBL6929986 | 0.91 | FAAH (0.46) | FAAHENPP2CA2 | |
| SCHEMBL6931423 | 0.91 | FAAH (0.46) | FAAHENPP2CA2 | |
| SCHEMBL3367410 | 0.91 | FAAH (0.46) | FAAHENPP2CA2 | |
| SCHEMBL63956 | 0.88 | MEN1 (0.38) | HTTTP53NPC1S1PR2S1PR4 | |
| SCHEMBL7271949 | 0.86 | NPC1 (0.36) | HTTTP53NPC1S1PR2S1PR4 | |
| SCHEMBL7062010 | 0.81 | MMP1 (0.33) | HTTTP53NPC1S1PR2S1PR4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1830228-B1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-08-05 | — | — | EP | claimed |
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6660447-B2 | Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-09 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4664197-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-17 | — | — | EP | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-12448485-B2 | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-10-21 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| EP-0908783-A1 | Resist compositions, their preparation and use for patterning processes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0887705-A1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |
| EP-0417557-B1 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AG (DE) | 1996-12-11 | — | — | EP | disclosed |
| EP-0444493-B1 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AG (DE) | 1996-11-20 | — | — | EP | disclosed |
| US-5424166-A | Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1995-06-13 | — | — | US | disclosed |
| US-5338641-A | Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound | HOECHST AKTIENGESELLSCHAFT (DE) | 1994-08-16 | — | — | US | disclosed |
| EP-0444493-A2 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-09-04 | — | — | EP | disclosed |
| EP-0417557-A2 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-03-20 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | HTT 4860/4885TP53 4535/4885NPC1 4479/4885 |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | RPS21, CA11, RPL21 | HTT 4300/4885TP53 4428/4885NPC1 4076/4885 |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | PRDM9, ARCN1, PUF60 | HTT 3346/4885TP53 2896/4885NPC1 3648/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.