Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MMP2 | P08253 | 1/20 | 0.31 |
| ▸ | MMP9 | P14780 | 1/20 | 0.31 |
| ▸ | MMP14 | P50281 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | GAA | P10253 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | GALK1 | P51570 | 1/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL6564688 | 0.94 | GAA (0.32) | MMP2MMP9MMP14ALDH1A1GAA | |
| Trifluoromethanesulfonic Acid SCHEMBL646438 | 0.90 | KDM4E (0.34) | KDM4ELMNA | |
| SCHEMBL3158567 | 0.90 | — | — | |
| SCHEMBL3162615 | 0.90 | — | — | |
| SCHEMBL3871523 | 0.89 | TSHR (0.33) | KDM4EALDH1A1LMNAGAAMAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL647892 | 0.86 | BRD4 (0.32) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL645884 | 0.85 | TYMS (0.38) | MMP2MMP9MMP14KDM4EALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL5359924 | 0.85 | CYP1A2 (0.36) | MAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL6566214 | 0.84 | HSD17B10 (0.34) | KDM4EALDH1A1GAA | |
| Trifluoromethanesulfonic Acid SCHEMBL646751 | 0.84 | MMP2 (0.33) | MMP2MMP9MMP14ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9170492-B2 | Silicon-containing film-forming composition, silicon-containing film, and pattern forming method | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9140985-B2 | — | — | 2015-09-22 | — | — | US | disclosed |
| US-9134611-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-09-15 | — | — | US | disclosed |
| US-8691496-B2 | Method for forming resist under layer film, pattern forming method and composition for resist under layer film | JSR CORPORATION (JP) | 2014-04-08 | — | — | US | disclosed |
| US-8663905-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2014-03-04 | — | — | US | disclosed |
| US-20140048512-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-02-20 | — | — | US | disclosed |
| US-8450045-B2 | Pattern forming method | JSR CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20130004900-A1 | METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM | JSR CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-8334338-B2 | Composition for forming resist lower layer film | JSR CORPORATION (JP) | 2012-12-18 | — | — | US | disclosed |
| US-8288073-B2 | Pattern forming method | JSR CORPORATION (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| US-6242161-B1 | ABSORPTION COATINGS USING COPOLYMERS | JSR CORPORATION (JP) | 2001-06-05 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |