⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL77333 | 0.94 | — | — | |
| SCHEMBL29044678 | 0.89 | — | — | |
| Hydrochloric Acid SCHEMBL28545896 | 0.89 | — | — | |
| SCHEMBL28320581 | 0.89 | — | — | |
| SCHEMBL8209648 | 0.89 | — | — | |
| Alcohol SCHEMBL29833660 | 0.80 | ALDH1A1 (0.55) | — | |
| Ethylamine SCHEMBL28675267 | 0.80 | — | — | |
| Hydrochloric Acid SCHEMBL16093805 | 0.70 | — | — | |
| SCHEMBL78390 | 0.67 | — | — | |
| Ammonia Solution, Strong SCHEMBL736640 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 220 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024137272-A1 | METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION | APPLIED MATERIALS, INC. (US) | 2024-06-27 | — | — | WO | claimed |
| US-20240204061-A1 | METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION | APPLIED MATERIALS, INC. | 2024-06-20 | — | — | US | claimed |
| US-11851755-B2 | Sequential infiltration synthesis apparatus and a method of forming a patterned structure | ASM IP HOLDING B.V. (NL) | 2023-12-26 | — | — | US | claimed |
| US-20220149175-A1 | STRUCTURES INCLUDING METAL CARBIDE MATERIAL, DEVICES INCLUDING THE STRUCTURES, AND METHODS OF FORMING SAME | ASM IP HOLDING B.V. (NL) | 2022-05-12 | — | — | US | claimed |
| US-20210399111-A1 | TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS | ASM IP HOLDING B.V. (NL) | 2021-12-23 | — | — | US | claimed |
| US-11139383-B2 | Titanium aluminum and tantalum aluminum thin films | ASM IP HOLDING B.V. (NL) | 2021-10-05 | — | — | US | claimed |
| CN-112470263-A | Method and apparatus for high reflectivity aluminum layer | 应用材料公司 | 2021-03-09 | — | — | CN | claimed |
| US-20200328285-A1 | TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS | ASM IP HOLDING B.V. (NL) | 2020-10-15 | — | — | US | claimed |
| US-20190338415-A1 | METHODS AND APPARATUS FOR HIGH REFLECTIVITY ALUMINUM LAYERS | APPLIED MATERIALS, INC. | 2019-11-07 | — | — | US | claimed |
| US-10458018-B2 | Structures including metal carbide material, devices including the structures, and methods of forming same | ASM IP HOLDING B.V. (NL) | 2019-10-29 | — | — | US | claimed |
| US-6844627-B2 | Metal film semiconductor device and a method for forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-01-18 | — | — | US | claimed |
| US-20040051175-A1 | Metal film semiconductor device and a method for forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-03-18 | — | — | US | claimed |
| US-20030197186-A1 | Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same | MICRON TECHNOLOGY, INC. | 2003-10-23 | — | — | US | claimed |
| US-20030012709-A1 | Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical | AMERICAN AIR LIQUIDE, INC. | 2003-01-16 | — | — | US | claimed |
| US-6174563-B1 | FORMING AN INTEGRATED CIRCUIT WHICH INCLUDES A METAL FILM LAYER FOR WIRING | NEC CORPORATION (JP) | 2001-01-16 | — | — | US | claimed |
| US-6159854-A | Process of growing conductive layer from gas phase | FUJITSU LIMITED (JP) | 2000-12-12 | — | — | US | claimed |
| US-6141476-A | Hollow waveguide for ultraviolet light and making the same | MATSUURA YUJI (JP) | 2000-10-31 | — | — | US | claimed |
| US-5998297-A | SUBJECTING THE CONDUCTIVE STRUCTURE TO A COMBINATION OF PLASMA, AN ETCHANT, AND A GASEOUS ALUMINUM SOURCE. | TEXAS INSTRUMENTS INCORPORATED (US) | 1999-12-07 | — | — | US | claimed |
| EP-0838848-A1 | Plasma etching of a metal layer comprising copper | TEXAS INSTRUMENTS INCORPORATED (US) | 1998-04-29 | — | — | EP | claimed |
| US-5464666-A | Process for chemical vapor codeposition of copper and aluminum alloys | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1995-11-07 | — | — | US | claimed |