Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL65810 | 0.94 | — | — | |
| SCHEMBL1225091 | 0.82 | MEN1 (0.35) | MEN1KMT2A | |
| SCHEMBL9354384 | 0.81 | MEN1 (0.41) | MEN1KMT2ASLC6A3LMNAPOLB | |
| SCHEMBL6554397 | 0.81 | MEN1 (0.38) | MEN1KMT2ASLC6A3LMNAPOLB | |
| SCHEMBL390230 | 0.81 | MEN1 (0.32) | MEN1KMT2A | |
| SCHEMBL28647211 | 0.81 | MEN1 (0.38) | MEN1KMT2ASLC6A3EPHX2 | |
| SCHEMBL7716652 | 0.81 | MEN1 (0.41) | MEN1KMT2ASLC6A3LMNAPOLB | |
| SCHEMBL7714287 | 0.80 | MEN1 (0.35) | MEN1KMT2A | |
| SCHEMBL23803696 | 0.80 | HSD11B1 (0.44) | MEN1KMT2ALMNAPOLB | |
| SCHEMBL12118788 | 0.79 | TSHR (0.40) | MEN1KMT2ASLC6A3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1003 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6623909-B2 | Polysiloxane | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6461790-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6461789-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASERS, AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-6369279-B1 | STYRENE WITH ETHER OR FLUORINE GROUPS FOR POLYMERS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-09 | — | — | US | claimed |
| US-20240241442-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-18 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-12013639-B2 | Positive resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-18 | — | — | US | disclosed |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-06 | — | — | US | disclosed |
| CN-118112887-A | Resist composition and pattern forming method | 信越化学工业株式会社 | 2024-05-31 | — | — | CN | disclosed |
| US-20240168378-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-23 | — | — | US | disclosed |
| US-6048661-A | POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-04-11 | — | — | US | disclosed |
| US-6030746-A | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPRISES A ORGANIC SOLVENT, AN ALKALI SOLUBLE RESIN, A PHOTOACID GENERATOR AND A DISSOLUTION RATE REGULATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-02-29 | — | — | US | disclosed |
| US-6027854-A | ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. | 2000-02-22 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| EP-0908473-A1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0908783-A1 | Resist compositions, their preparation and use for patterning processes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0887705-A1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240168378-A1 | Positive Resist Material And Patterning Process | HNRNPU, DSTN, NSUN2 | MEN1 2066/4885KMT2A 833/4885SLC6A3 2218/4885 |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | ADAR, HNRNPU, POLQ | MEN1 2450/4885KMT2A 253/4885SLC6A3 939/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.