SCHEMBL65050

SCHEMBL65050

COC(=O)CN1CCSCC1

nearest known ligand 0.45

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 13/20 0.39
KDM4E B2RXH2 7/20 0.39
GAA P10253 2/20 0.39
HPGD P15428 2/20 0.39
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
KLK7 P49862 1/20 0.39
NPC1 O15118 1/20 0.39
MAPT P10636 1/20 0.39
THRB P10828 1/20 0.39
TSHR P16473 1/20 0.37
LMNA P02545 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.36
HTT P42858 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
USP2 O75604 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TDP1 Q9NUW8 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL70778 0.84 TSHR (0.46) ALDH1A1KDM4EGAATSHRLMNA
SCHEMBL12379861 0.84 TSHR (0.46) ALDH1A1KDM4EGAATSHRLMNA
SCHEMBL1133592 0.84
SCHEMBL28738942 0.80
SCHEMBL65441 0.80 ALDH1A1 (0.50) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL66203 0.80 SMN1; SMN2 (0.56) ALDH1A1KDM4EHPGDMAPTTSHR
SCHEMBL12936831 0.80 ALDH1A1 (0.43) ALDH1A1KDM4EGAAHPGDTHRB
SCHEMBL12936832 0.79 SMN1; SMN2 (0.50) ALDH1A1KDM4EMEN1KMT2ANPC1
SCHEMBL12936833 0.79 PLA2G10 (0.37) ALDH1A1KDM4EGAAMEN1KMT2A
Hydrochloric Acid SCHEMBL28912856 0.78 ALDH1A1 (0.49) ALDH1A1GAAMEN1KMT2ATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 434 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250372377-A1 METAL-CONTAINING FILM PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-9410951-B2 Method for producing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020098443-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-25 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020098443-A1 Amine compounds, resist compositions and patterning process PARG, EHMT1, EHMT2 ALDH1A1 4186/4885KDM4E 27/4885GAA 4597/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.