Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH3 | Q9Y5N1 | 3/20 | 0.39 |
| ▸ | SLC6A9 | P48067 | 1/20 | 0.34 |
| ▸ | CCR2 | P41597 | 1/20 | 0.34 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.34 |
| ▸ | PDK1 | Q15118 | 3/20 | 0.32 |
| ▸ | HRH1 | P35367 | 2/20 | 0.30 |
| ▸ | CCR3 | P51677 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64789 | 0.87 | HRH3 (0.39) | HRH3SLC6A9CCR2KCNH2PDK1 | |
| SCHEMBL25081526 | 0.76 | HRH3 (0.40) | HRH3PDK1 | |
| SCHEMBL25081505 | 0.76 | HRH3 (0.40) | HRH3PDK1 | |
| SCHEMBL21070546 | 0.74 | PDK1 (0.39) | PDK1 | |
| SCHEMBL21069848 | 0.74 | PDK1 (0.39) | PDK1 | |
| SCHEMBL25081823 | 0.74 | HRH3 (0.38) | HRH3 | |
| SCHEMBL18669340 | 0.74 | PDK1 (0.39) | PDK1 | |
| SCHEMBL3901925 | 0.73 | SLC6A9 (0.43) | HRH3SLC6A9PDK1 | |
| SCHEMBL12332159 | 0.72 | SLC6A9 (0.39) | HRH3SLC6A9PDK1 | |
| SCHEMBL12233419 | 0.72 | SLC6A9 (0.39) | HRH3SLC6A9PDK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 399 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6743564-B2 | A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-01 | — | — | US | claimed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20210063873-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210063871-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| EP-1276012-B1 | Resist patterning process | SHINETSU CHEMICAL CO (JP) | 2016-03-23 | — | — | EP | disclosed |
| EP-1698937-B1 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORP (JP) | 2015-12-23 | — | — | EP | disclosed |
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| US-20020168581-A1 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-20020150835-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-17 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1236745-A2 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-04 | — | — | EP | disclosed |
| US-20020115807-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115018-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115821-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020102493-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-01 | — | — | US | disclosed |
| US-20020061463-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-23 | — | — | US | disclosed |
| EP-1195390-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-10 | — | — | EP | disclosed |