Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2C19 | P33261 | 2/20 | 0.68 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.68 |
| ▸ | PRMT3 | O60678 | 1/20 | 0.56 |
| ▸ | CARM1 | Q86X55 | 1/20 | 0.56 |
| ▸ | PRMT6 | Q96LA8 | 1/20 | 0.56 |
| ▸ | PRMT1 | Q99873 | 1/20 | 0.56 |
| ▸ | PRMT8 | Q9NR22 | 1/20 | 0.56 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.48 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.42 |
| ▸ | ANPEP | P15144 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 3/20 | 0.40 |
| ▸ | CA1 | P00915 | 2/20 | 0.40 |
| ▸ | CA12 | O43570 | 2/20 | 0.40 |
| ▸ | CA9 | Q16790 | 2/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | CA3 | P07451 | 1/20 | 0.39 |
| ▸ | CA4 | P22748 | 1/20 | 0.39 |
| ▸ | CA6 | P23280 | 1/20 | 0.39 |
| ▸ | CA5A | P35218 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL347138 | 1.00 | CYP2C19 (0.68) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL344526 | 0.96 | CYP2C9 (0.72) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| Bromide SCHEMBL38656355 | 0.93 | CYP2C9 (0.68) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL15189353 | 0.88 | PRMT3 (0.68) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL1408955 | 0.88 | PRMT3 (0.68) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL8345767 | 0.88 | CYP2C19 (0.56) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL20257169 | 0.88 | CYP2C19 (0.56) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL8741137 | 0.87 | CYP2C19 (0.70) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL24066387 | 0.86 | CYP2C19 (0.54) | CYP2C19CYP2C9PRMT3CARM1PRMT6 | |
| SCHEMBL18576486 | 0.86 | CYP2C9 (0.54) | CYP2C19CYP2C9PRMT3CARM1PRMT6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1006 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20240142876-A1 | SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2024-05-02 | — | — | US | disclosed |
| US-11970557-B2 | Polymer containing photoacid generator | LG CHEM, LTD. (KR) | 2024-04-30 | — | — | US | disclosed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | disclosed |
| US-11961636-B2 | Silica-containing insulating composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-04-16 | — | — | US | disclosed |
| US-20240105451-A1 | SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2024-03-28 | — | — | US | disclosed |
| EP-3263626-B1 | SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-13 | — | — | EP | disclosed |
| US-11892773-B2 | Photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-06 | — | — | US | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-6066433-A | SILICONE POLYMER CONTAINING PHENOLIC HYDROXYL GROUPS HAVING HYDROGEN ATOMS OF SOME PHENOLIC HYDROXYL GROUPS REPLACED BY ACID LABILE GROUPS, CROSSLINKED AT SOME OF THE REMAINING PHENOLIC HYDROXYL GROUPS WITH GROUPS HAVING ETHER LINKAGES | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-23 | — | — | US | disclosed |
| US-6048661-A | POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-04-11 | — | — | US | disclosed |
| US-6033828-A | POLYVINYLPHENOL DERIVATIVES | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-03-07 | — | — | US | disclosed |
| US-5972559-A | A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5942367-A | HIGH SENSITIVITY, RESOLUTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-08-24 | — | — | US | disclosed |
| EP-0908783-A1 | Resist compositions, their preparation and use for patterning processes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0908473-A1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| US-5876900-A | POLYHYDROXYSTYRENE POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-02 | — | — | US | disclosed |