⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15584 | 0.96 | — | — | |
| SCHEMBL15068452 | 0.96 | CA1 (0.46) | — | |
| SCHEMBL4729227 | 0.92 | — | — | |
| SCHEMBL6531312 | 0.92 | — | — | |
| SCHEMBL324713 | 0.92 | — | — | |
| SCHEMBL3265050 | 0.92 | — | — | |
| Strontium SCHEMBL10626900 | 0.92 | — | — | |
| SCHEMBL9358622 | 0.92 | — | — | |
| SCHEMBL11244035 | 0.92 | — | — | |
| SCHEMBL14995323 | 0.92 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-11506979-B2 | Method using silicon-containing underlayers | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2022-11-22 | — | — | US | disclosed |
| EP-4083091-A1 | POLYMER ELECTROLYTE, AND LITHIUM ION BATTERY COMPRISING SAME | Zhuhai CosMX Battery Co., Ltd. (CN) | 2022-11-02 | — | — | EP | disclosed |
| US-11485824-B2 | Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-11-01 | — | — | US | disclosed |
| US-11480879-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-20220221793-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-07-14 | — | — | US | disclosed |
| US-11385544-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-07-12 | — | — | US | disclosed |
| US-20220216513-A1 | POLYMER ELECTROLYTE AND LITHIUM-ION BATTERY INCLUDING THE POLYMER ELECTROLYTE | ZHUHAI COSMX BATTERY CO., LTD. (CN) | 2022-07-07 | — | — | US | disclosed |
| EP-4020081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | Shin-Etsu Chemical Co., Ltd. (JP) | 2022-06-29 | — | — | EP | disclosed |
| US-6765721-B2 | INCLUDES FINE METAL PARTICLES HAVING SHAPE ANISOTROPY DISPERSED IN SILICON DIOXIDE CONTAINING MATRIX MATERIAL; RELIABILITY; EASILY MADE | NIPPON SHEET GLASS CO., LTD. (JP) | 2004-07-20 | — | — | US | disclosed |
| US-20020186469-A1 | Polarization element and method for manufacturing the same | NIPPON SHEET GLASS CO., LTD. | 2002-12-12 | — | — | US | disclosed |