SCHEMBL6544675

SCHEMBL6544675

CC(S(=O)(=O)c1ccccc1)(S(=O)(=O)c1ccccc1)S(=O)(=O)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR6 P50406 5/20 0.50
ALDH1A1 P00352 4/20 0.48
PSIP1 O75475 1/20 0.48
CA1 P00915 2/20 0.46
CA2 P00918 2/20 0.46
HSD17B10 Q99714 1/20 0.46
TDP1 Q9NUW8 1/20 0.46
CA12 O43570 1/20 0.46
CA3 P07451 1/20 0.46
CA4 P22748 1/20 0.46
CA6 P23280 1/20 0.46
CA5A P35218 1/20 0.46
CA7 P43166 1/20 0.46
PLA2G7 Q13093 1/20 0.46
CA9 Q16790 1/20 0.46
CA13 Q8N1Q1 1/20 0.46
CA14 Q9ULX7 1/20 0.46
CA5B Q9Y2D0 1/20 0.46
TSHR P16473 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL780280 0.84 ALDH1A1 (0.60) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL384939 0.84 HTR6 (0.50) HTR6ALDH1A1PSIP1CA1CA2
Fluoride SCHEMBL775526 0.82 ALDH1A1 (0.58) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL19033894 0.82 HTR6 (0.48) HTR6ALDH1A1PSIP1CA1CA2
Benzene SCHEMBL8203386 0.81 HTR6 (0.52) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL152444 0.81 HTR6 (0.52) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL4640457 0.81 HTR6 (0.52) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL7321456 0.80 HTR6 (0.46) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL5961978 0.80 HTR6 (0.46) HTR6ALDH1A1PSIP1CA1CA2
SCHEMBL16469554 0.80 HTR6 (0.46) HTR6ALDH1A1PSIP1CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed
EP-0654149-B1 POSITIVE-ACTING RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL PRODUCED THEREWITH HOECHST AG (DE) 1997-02-05 EP disclosed
EP-0654149-A1 POSITIVE-ACTING RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL PRODUCED THEREWITH. HOECHST AG (DE) 1995-05-24 EP disclosed
US-5372914-A Pattern forming method KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-13 US disclosed
US-5348838-A Photoresist KABUSHIKI KAISHA TOSHIBA (JP) 1994-09-20 US disclosed
WO-1994003837-A1 POSITIVE-ACTING RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL PRODUCED THEREWITH HOECHST AKTIENGESELLSCHAFT (DE) 1994-02-17 WO disclosed