Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64869 | 0.96 | CYP1A2 (0.35) | CYP1A2MAPK1 | |
| SCHEMBL65255 | 0.82 | CYP1A2 (0.41) | CYP1A2MAPK1 | |
| SCHEMBL65601 | 0.82 | LCK (0.39) | — | |
| SCHEMBL64042 | 0.82 | LCK (0.39) | — | |
| SCHEMBL65880 | 0.79 | MEN1 (0.34) | — | |
| SCHEMBL65407 | 0.78 | CYP1A2 (0.41) | CYP1A2MAPK1 | |
| SCHEMBL12300379 | 0.76 | MEN1 (0.34) | — | |
| SCHEMBL28986791 | 0.75 | MEN1 (0.32) | — | |
| SCHEMBL22166141 | 0.75 | BLM (0.39) | — | |
| SCHEMBL19554777 | 0.73 | MEN1 (0.45) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 177 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6743564-B2 | A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-01 | — | — | US | claimed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20210063871-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210063873-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| US-9410951-B2 | Method for producing substrate for making microarray | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| EP-1698937-B1 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORP (JP) | 2015-12-23 | — | — | EP | disclosed |
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| US-20030215740-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20030215739-A1 | Polymers, resist compositions and patterning process | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20030207201-A1 | Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-06 | — | — | US | disclosed |
| US-20030194644-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-10-16 | — | — | US | disclosed |
| US-20030194645-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-10-16 | — | — | US | disclosed |
| US-6605678-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-08-12 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| US-20020115018-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115821-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | CCNH, PAH, POLH | CYP1A2 567/4885MAPK1 27/4885 |
| US-20030207201-A1 | Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method | ASIC1, PARG, EEF1A2 | CYP1A2 3591/4885MAPK1 1478/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.