SCHEMBL6552985

SCHEMBL6552985

CC1(OC(=O)O)CCOC(=O)C1

nearest known ligand 0.52

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.52
CYP2C9 P11712 1/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13899248 0.86 LMNA (0.52) LMNACYP2C9
SCHEMBL6556618 0.81 LMNA (0.37) LMNACYP2C9
SCHEMBL11988737 0.81 LMNA (0.47) LMNACYP2C9
SCHEMBL13893245 0.81 LMNA (0.47) LMNACYP2C9
SCHEMBL13817661 0.81 LMNA (0.47) LMNACYP2C9
SCHEMBL1481810 0.80 LMNA (0.46) LMNACYP2C9
SCHEMBL217689 0.80 LMNA (0.46) LMNACYP2C9
SCHEMBL217690 0.80 LMNA (0.46) LMNACYP2C9
SCHEMBL1481813 0.80 LMNA (0.46) LMNACYP2C9
SCHEMBL10305859 0.80 LMNA (0.46) LMNACYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6737215-B2 Photoresist composition for deep ultraviolet lithography CLARIANT FINANCE (BVI) LTD (VG) 2004-05-18 US claimed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP claimed
US-6686429-B2 COPOLYMER OF AN ETHENICALLY UNSATURATED NITRILE-CONTAINING MONOMER AND A NONAROMATIC CYCLIC UNIT SUCH AS TERT-BUTYL NORBORENECARBOXYLATE; SENSITIVE IN DEEP ULTRAVIOLET REGION; MICROLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US claimed
US-20030013831-A1 NOVEL POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2003-01-16 US claimed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US claimed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO claimed
EP-1392745-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS Clariant Finance (BVI) Limited (VG) 2004-03-03 EP disclosed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP disclosed
US-6686429-B2 COPOLYMER OF AN ETHENICALLY UNSATURATED NITRILE-CONTAINING MONOMER AND A NONAROMATIC CYCLIC UNIT SUCH AS TERT-BUTYL NORBORENECARBOXYLATE; SENSITIVE IN DEEP ULTRAVIOLET REGION; MICROLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US disclosed
US-20030013831-A1 NOVEL POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2003-01-16 US disclosed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US disclosed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO disclosed
WO-2002092651-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO disclosed