SCHEMBL6562729

SCHEMBL6562729

C#C[Si](OC(C)=O)(OC(C)=O)OC(C)=O

nearest known ligand 0.33

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6562949 0.90 ALDH1A1 (0.30) ALDH1A1TSHR
SCHEMBL6564128 0.78 ALDH1A1 (0.33) ALDH1A1TSHR
SCHEMBL6562870 0.78 ALDH1A1 (0.33) ALDH1A1TSHR
SCHEMBL6562370 0.76 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL6562713 0.76 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL6562735 0.72
SCHEMBL6562675 0.72 ALDH1A1 (0.35) ALDH1A1
SCHEMBL6562677 0.70 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL9704519 0.67
SCHEMBL49515 0.65 ALDH1A1 (0.44) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4047109-A1 PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES Versum Materials US, LLC (US) 2022-08-24 EP disclosed
US-20220157601-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features VERSUM MATERIALS US, LLC (US) 2022-05-19 US disclosed
EP-3507393-B1 PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES VERSUM MAT US LLC (US) 2022-04-20 EP disclosed
US-11017998-B2 Precursors and flowable CVD methods for making low-K films to fill surface features VERSUM MATERIALS US, LLC (US) 2021-05-25 US disclosed
US-20210043446-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features VERSUM MATERIALS US, LLC (US) 2021-02-11 US disclosed
US-10818493-B2 Silicon-based hardmask ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-10-27 US disclosed
US-20200058496-A1 Precursors And Flowable CVD Methods For Making Low-K Films To Fill Surface Features VERSUM MATERIALS US, LLC (US) 2020-02-20 US disclosed
US-10468244-B2 Precursors and flowable CVD methods for making low-K films to fill surface features VERSUM MATERIALS US, LLC (US) 2019-11-05 US disclosed
EP-3507393-A1 PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES Versum Materials US, LLC (US) 2019-07-10 EP disclosed
US-20190115209-A1 SILICON-BASED HARDMASK ROHM & HAAS ELECT MAT (US) 2019-04-18 US disclosed
US-10186424-B2 Silicon-based hardmask ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-01-22 US disclosed
US-20180366319-A1 SILICON-BASED HARDMASK ROHM & HAAS ELECT MAT (US) 2018-12-20 US disclosed
US-20180315598-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features VERSUM MATERIALS US, LLC (US) 2018-11-01 US disclosed
US-20180061636-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features VERSUM MATERIALS US, LLC (US) 2018-03-01 US disclosed
EP-1122746-B1 Composition for film formation and insulating film JSR CORP (JP) 2004-09-22 EP disclosed
US-6468589-B2 A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING JSR CORPORATION (JP) 2002-10-22 US disclosed
US-20010012870-A1 Composition for film formation and insulating film JSR CORPORATION (JP) 2001-08-09 US disclosed
EP-1122746-A1 Composition for film formation and insulating film JSR Corporation (JP) 2001-08-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20220157601-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features KDR, VCL, SIK1 ALDH1A1 3659/4885TSHR 4874/4885
US-10468244-B2 Precursors and flowable CVD methods for making low-K films to fill surface features KDR, LDLR, SIK1 ALDH1A1 3547/4885TSHR 4866/4885
US-20180315598-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features KDR, VCL, SIK1 ALDH1A1 3659/4885TSHR 4874/4885
US-11017998-B2 Precursors and flowable CVD methods for making low-K films to fill surface features KDR, VCL, SIK1 ALDH1A1 3659/4885TSHR 4874/4885
US-20180061636-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features KDR, LDLR, SIK1 ALDH1A1 3547/4885TSHR 4866/4885
US-20200058496-A1 Precursors And Flowable CVD Methods For Making Low-K Films To Fill Surface Features KDR, LDLR, SIK1 ALDH1A1 3547/4885TSHR 4866/4885
US-20210043446-A1 Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features KDR, VCL, SIK1 ALDH1A1 3659/4885TSHR 4874/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.