SCHEMBL6721074

SCHEMBL6721074

CC(=O)c1ccc(OC(=O)C(C)(C)C(C)(C)C)cc1

nearest known ligand 0.55

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ELANE P08246 10/20 0.55
MAPT P10636 2/20 0.53
RAB9A P51151 2/20 0.53
HPGD P15428 1/20 0.53
L3MBTL1 Q9Y468 1/20 0.47
HSD17B1 P14061 1/20 0.47
NPSR1 Q6W5P4 1/20 0.46
GAA P10253 1/20 0.46
KMT2A Q03164 2/20 0.45
NPC1 O15118 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
STS P08842 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11336605 0.85 ELANE (0.75) ELANEMAPTRAB9AHPGDL3MBTL1
SCHEMBL20345309 0.82 ELANE (0.59) ELANEMAPTGAAKMT2A
SCHEMBL6721082 0.80 MAPT (0.59) ELANEMAPTRAB9AL3MBTL1KMT2A
SCHEMBL9541160 0.79 MAPT (0.55) ELANEMAPTRAB9AHPGDL3MBTL1
SCHEMBL9541092 0.79 MAPT (0.55) ELANEMAPTRAB9AHPGDL3MBTL1
SCHEMBL6744127 0.79 ELANE (0.59) ELANEMAPTRAB9AHPGDL3MBTL1
SCHEMBL6721075 0.78 ELANE (0.53) ELANEMAPTL3MBTL1NPSR1GAA
SCHEMBL10355780 0.76 MAPT (0.67) ELANEMAPTRAB9AHPGDL3MBTL1
SCHEMBL175551 0.76 MAPT (0.67) ELANEMAPTRAB9AHPGDL3MBTL1
4-(Acetate)Acetophenone SCHEMBL1142839 0.76 MAPT (0.67) ELANEMAPTRAB9AHPGDL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed