Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | AMY1A | P0DUB6 | 4/20 | 0.55 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.46 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.46 |
| ▸ | ADRA1D | P25100 | 1/20 | 0.46 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.46 |
| ▸ | ADRA1B | P35368 | 1/20 | 0.46 |
| ▸ | TLK2 | Q86UE8 | 2/20 | 0.44 |
| ▸ | MC4R | P32245 | 1/20 | 0.44 |
| ▸ | SMPD3 | Q9NY59 | 1/20 | 0.43 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.42 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.42 |
| ▸ | PDGFRB | P09619 | 1/20 | 0.41 |
| ▸ | CDKN1A | P38936 | 1/20 | 0.40 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.40 |
| ▸ | PRKAB2 | O43741 | 2/20 | 0.40 |
| ▸ | PRKAG1 | P54619 | 2/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27303150 | 0.84 | CYP1A2 (0.47) | AMY1AMC4RCYP1A2CYP3A4CYP2D6 | |
| SCHEMBL8542548 | 0.82 | ADRA2A (0.57) | AMY1AADRA2AADRA2CADRA1DADRA1A | |
| SCHEMBL6003238 | 0.82 | PDE2A (0.55) | ADRA2AADRA2CADRA1DADRA1AADRA1B | |
| SCHEMBL11203475 | 0.82 | NOTUM (0.54) | ADRA2AADRA2CADRA1DADRA1AADRA1B | |
| SCHEMBL31559158 | 0.81 | SMPD3 (0.50) | ADRA2AADRA2CADRA1DADRA1AADRA1B | |
| SCHEMBL8541036 | 0.81 | SMPD3 (0.50) | ADRA2AADRA2CADRA1DADRA1AADRA1B | |
| SCHEMBL31429681 | 0.81 | NOTUM (0.53) | ADRA2AADRA2CADRA1DADRA1AADRA1B | |
| SCHEMBL8540690 | 0.81 | ADRA2A (0.46) | ADRA2AADRA2CADRA1DADRA1AADRA1B | |
| SCHEMBL14316064 | 0.80 | AMY1A (0.36) | AMY1ATLK2MC4RCYP1A2CYP3A4 | |
| SCHEMBL10926149 | 0.79 | ADRA2A (0.44) | ADRA2AADRA2CADRA1DADRA1AADRA1B |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8084187-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-12-27 | — | — | US | disclosed |
| US-7989137-B2 | Resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-08-02 | — | — | US | disclosed |
| US-7923199-B2 | Using a sulfonium acid generator that forms a fluorine-substituted sulfonic acid compound; improved in the exposure latitude, pitch dependency and line edge roughness and enhanced in the sensitivity and resolution at the exposure with EUV light | FUJIFILM CORPORATION (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7858289-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-12-28 | — | — | US | disclosed |
| US-7799506-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-7615330-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2009-11-10 | — | — | US | disclosed |
| US-20090253070-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-08 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090111047-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087789-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20070224540-A1 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-09-27 | — | — | US | disclosed |