SCHEMBL6741739

SCHEMBL6741739

CCON=C(C)CCC(=O)O

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.42
SLC15A2 Q16348 1/20 0.42
EGLN1 Q9GZT9 3/20 0.39
ALKBH5 Q6P6C2 1/20 0.39
SUCNR1 Q9BXA5 1/20 0.39
FFAR3 O14843 1/20 0.39
HDAC3 O15379 1/20 0.39
HDAC1 Q13547 1/20 0.39
HDAC2 Q92769 1/20 0.39
HDAC8 Q9BY41 1/20 0.39
PHF8 Q9UPP1 3/20 0.37
KDM2A Q9Y2K7 3/20 0.37
KDM6B O15054 2/20 0.37
KDM5C P41229 2/20 0.37
KDM4E B2RXH2 1/20 0.37
AKR1B1 P15121 1/20 0.34
TSHR P16473 5/20 0.34
PPARA Q07869 7/20 0.34
PPARG P37231 6/20 0.33
PPARD Q03181 6/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL951840 0.83 FFAR3 (0.41) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL18807276 0.81 LMNA (0.46) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL15274237 0.77 LMNA (0.46) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL15260387 0.77 LMNA (0.46) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL15260388 0.77 LMNA (0.46) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL5481505 0.73 CES1 (0.36) ALDH1A1KMT2AMEN1
SCHEMBL17570446 0.73 CES1 (0.36) ALDH1A1KMT2AMEN1
SCHEMBL6740457 0.72 LMNA (0.41) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL6736880 0.72 LMNA (0.41) LMNASLC15A2EGLN1ALKBH5SUCNR1
SCHEMBL6741243 0.72 LMNA (0.37) LMNASLC15A2EGLN1ALKBH5SUCNR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6689427-B2 SUITABLE FOR THE DEPOSITION OF A MULTICOMPONENT METAL OXIDE THIN FILM CONTAINING A GROUP IV METAL SUCH AS TITANIUM; FOR EXAMPLE, TITANIUM BIS(4-(ETHOXY)IMINO-2-PENTANOATE) SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-10 US claimed
US-20210140048-A1 SEMICONDUCTOR MANUFACTURING APPARATUS SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-05-13 US disclosed
US-10269712-B2 Semiconductor devices including a capping layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2019-04-23 US disclosed
US-20180218980-A1 Semiconductor Devices Including a Capping Layer SAMSUNG ELECTRONICS CO LTD (KR) 2018-08-02 US disclosed
US-9953924-B2 Semiconductor devices including a capping layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-04-24 US disclosed
US-20170278797-A1 Semiconductor Devices Including a Capping Layer SAMSUNG ELECTRONICS CO LTD (KR) 2017-09-28 US disclosed
US-9711453-B2 Semiconductor devices including a capping layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-07-18 US disclosed
US-20160293547-A1 SEMICONDUCTOR DEVICES INCLUDING A CAPPING LAYER SAMSUNG ELECTRONICS CO LTD (KR) 2016-10-06 US disclosed