Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 1/20 | 0.41 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.41 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.41 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.41 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | SLC15A2 | Q16348 | 1/20 | 0.39 |
| ▸ | PPARA | Q07869 | 9/20 | 0.39 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.37 |
| ▸ | ALKBH5 | Q6P6C2 | 1/20 | 0.36 |
| ▸ | SUCNR1 | Q9BXA5 | 1/20 | 0.36 |
| ▸ | EGLN1 | Q9GZT9 | 1/20 | 0.36 |
| ▸ | PPARG | P37231 | 8/20 | 0.35 |
| ▸ | GPR84 | Q9NQS5 | 7/20 | 0.35 |
| ▸ | PPARD | Q03181 | 7/20 | 0.35 |
| ▸ | HDAC11 | Q96DB2 | 5/20 | 0.35 |
| ▸ | TSHR | P16473 | 4/20 | 0.35 |
| ▸ | PTPN1 | P18031 | 3/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | TLR2 | O60603 | 2/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6741739 | 0.83 | LMNA (0.42) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL18807276 | 0.78 | LMNA (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL15274237 | 0.74 | LMNA (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL15260387 | 0.74 | LMNA (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL15260388 | 0.74 | LMNA (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL10705232 | 0.73 | — | — | |
| SCHEMBL15865995 | 0.73 | — | — | |
| SCHEMBL9945487 | 0.73 | — | — | |
| SCHEMBL5802121 | 0.72 | PTGS2 (0.34) | LMNAPPARAPPARGALDH1A1 | |
| SCHEMBL5802118 | 0.72 | PTGS2 (0.34) | LMNAPPARAPPARGALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7892964-B2 | Strontium precursor beta -diketonate, beta -diketiminate, amidinate, cyclopentadienyl, diorganoamide, carboxylate and/or alkoxide; and titanium precursor compound are reacted in a plurality of cycles to form strontium titanate; low strontium carbonate content; atomic layer deposition; high dielectrics | MICRON TECHNOLOGY, INC. (US) | 2011-02-22 | — | — | US | claimed |
| WO-2008100691-A2 | VAPOR DEPOSITION METHODS FOR FORMING A METAL- CONTAINING LAYER ON A SUBSTRATE | MICRON TECHNOLOGY, INC. (US) | 2008-08-21 | — | — | WO | claimed |
| US-20080194088-A1 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2008-08-14 | — | — | US | claimed |
| US-6689427-B2 | SUITABLE FOR THE DEPOSITION OF A MULTICOMPONENT METAL OXIDE THIN FILM CONTAINING A GROUP IV METAL SUCH AS TITANIUM; FOR EXAMPLE, TITANIUM BIS(4-(ETHOXY)IMINO-2-PENTANOATE) | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-02-10 | — | — | US | claimed |
| US-8557697-B2 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2013-10-15 | — | — | US | disclosed |
| US-7892964-B2 | Strontium precursor beta -diketonate, beta -diketiminate, amidinate, cyclopentadienyl, diorganoamide, carboxylate and/or alkoxide; and titanium precursor compound are reacted in a plurality of cycles to form strontium titanate; low strontium carbonate content; atomic layer deposition; high dielectrics | MICRON TECHNOLOGY, INC. (US) | 2011-02-22 | — | — | US | disclosed |
| US-20110021001-A1 | Vapor Deposition Methods for Forming a Metal-Containing Layer on a Substrate | MICRON TECHNOLOGY, INC. (US) | 2011-01-27 | — | — | US | disclosed |
| WO-2008100691-A2 | VAPOR DEPOSITION METHODS FOR FORMING A METAL- CONTAINING LAYER ON A SUBSTRATE | MICRON TECHNOLOGY, INC. (US) | 2008-08-21 | — | — | WO | disclosed |
| US-20080194088-A1 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2008-08-14 | — | — | US | disclosed |
| US-6669990-B2 | From a group IV metal complex having an N-alkoxy-b-ketoiminate tridentate ligand with a charge of -2; e.g., titanium bis (4-(2-methylethoxy) imino-2-pentanoate) | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-12-30 | — | — | US | disclosed |