SCHEMBL6742875

SCHEMBL6742875

COC(OC)([SiH2]C)C(c1ccccc1)(C(OC)(OC)[SiH2]C)C(OC)(OC)[SiH2]C

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
▸ MAPK1 P28482 1/20 0.38
▸ CES1 P23141 1/20 0.37
▸ CA4 P22748 1/20 0.37
▸ KCNN4 O15554 4/20 0.36
▸ ALDH1A1 P00352 4/20 0.35
▸ ALOX15 P16050 1/20 0.35
▸ KIF11 P52732 2/20 0.33
▸ KCNH2 Q12809 1/20 0.33
▸ LTA4H P09960 1/20 0.32
▸ TSHR P16473 2/20 0.32
▸ TAAR1 Q96RJ0 1/20 0.31
▸ GAA P10253 1/20 0.31
▸ KDM4E B2RXH2 1/20 0.31
▸ MEN1 O00255 1/20 0.31
▸ KMT2A Q03164 1/20 0.31
▸ ESR1 P03372 1/20 0.30
▸ CYP3A4 P08684 1/20 0.30
▸ ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6735662 0.79 MAPK1 (0.35) MAPK1CES1CA4KCNN4ALDH1A1
SCHEMBL11034971 0.69 MAPK1 (0.46) MAPK1CES1CA4KCNN4ALDH1A1
SCHEMBL204375 0.69 MAPK1 (0.52) MAPK1CES1CA4KCNN4ALDH1A1
SCHEMBL6735878 0.68 MAPK1 (0.41) MAPK1CES1CA4KCNN4ALDH1A1
SCHEMBL3836326 0.68 MAPK1 (0.46) MAPK1CES1CA4KCNN4ALDH1A1
Hydrochloric Acid SCHEMBL5524684 0.67 MAPK1 (0.44) MAPK1KCNN4ALDH1A1ALOX15TSHR
SCHEMBL1659349 0.66 MAPK1 (0.48) MAPK1CES1CA4KCNN4ALDH1A1
SCHEMBL1264373 0.66 MAPK1 (0.48) MAPK1CES1CA4KCNN4ALDH1A1
Methoxytriphenylmethane SCHEMBL9103 0.66 MAPK1 (0.48) MAPK1CES1CA4KCNN4ALDH1A1
SCHEMBL487231 0.66 MAPK1 (0.48) MAPK1CES1CA4KCNN4ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 — — US disclosed
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