SCHEMBL6744172

SCHEMBL6744172

CC(C)c1cc(C(C)C)c(S(=O)(=O)ON2C(=O)c3cccc4cccc(c34)C2=O)c(C(C)C)c1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 11/20 0.55
▸ ALDH1A1 P00352 10/20 0.55
▸ HPGD P15428 9/20 0.55
▸ MAPT P10636 8/20 0.55
▸ KMT2A Q03164 8/20 0.55
▸ MEN1 O00255 5/20 0.55
▸ HTT P42858 3/20 0.55
▸ LMNA P02545 3/20 0.52
▸ THRB P10828 1/20 0.52
▸ XBP1 P17861 2/20 0.46
▸ CYP1A2 P05177 1/20 0.46
▸ CYP3A4 P08684 1/20 0.46
▸ CYP2C19 P33261 1/20 0.46
▸ NPSR1 Q6W5P4 1/20 0.46
▸ TDP1 Q9NUW8 2/20 0.41
▸ F2 P00734 3/20 0.40
▸ SMN1; SMN2 Q16637 1/20 0.40
▸ VDR P11473 1/20 0.40
▸ ENPP3 O14638 1/20 0.40
▸ ENPP1 P22413 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5552400 0.89 KDM4E (0.58) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL19791398 0.85 KDM4E (0.43) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL19987604 0.83 TDP1 (0.40) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL17231439 0.79 MAPT (0.39) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL5555737 0.79 FABP4 (0.47) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL23280267 0.78 KDM4E (0.35) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL60582 0.75 KDM4E (0.65) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL12339104 0.75 KDM4E (0.65) KDM4EALDH1A1HPGDMAPTKMT2A
SCHEMBL7737489 0.74 FABP4 (0.49) KDM4EALDH1A1HPGDMAPTXBP1
SCHEMBL19361374 0.73 KDM4E (0.62) KDM4EALDH1A1HPGDMAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 — — US disclosed
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 — — US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 — — US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 — — US disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 — — US disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 — — US disclosed
US-20210356863-A1 CHEMICAL AMPLIFICATION-TYPE PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF PATTERNED RESIST LAYER, PRODUCTION METHOD OF PLATED MOLDED ARTICLE, COMPOUND, AND PRODUCTION METHOD OF COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2021-11-18 — — US disclosed
US-11142629-B2 Hydrogen barrier agent, hydrogen barrier film forming composition, hydrogen barrier film, method for producing hydrogen barrier film, and electronic element TOKYO OHKA KOGYO CO., LTD. (JP) 2021-10-12 — — US disclosed
EP-3064997-B1 LAMINATE AND USE OF A KIT FOR MANUFACTURING OF A LAMINATE FUJIFILM CORP (JP) 2021-04-28 — — EP disclosed
US-20190300674-A1 HYDROGEN BARRIER AGENT, HYDROGEN BARRIER FILM FORMING COMPOSITION, HYDROGEN BARRIER FILM, METHOD FOR PRODUCING HYDROGEN BARRIER FILM, AND ELECTRONIC ELEMENT TOKYO OHKA KOGYO CO., LTD. (JP) 2019-10-03 — — US disclosed
EP-1837704-A2 Resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-26 — — EP disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 — — US disclosed
US-20070218407-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-20 — — US disclosed
EP-1835341-A1 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 — — EP disclosed
EP-1835342-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 — — EP disclosed
US-7217493-B2 acid-decomposable group-containing polysiloxane or polysilsesquioxane and a specific amount of an acid generator that generates a sulfonic acid, and an organic base; high sensitivity, high resolution and good line edge roughness FUJIFILM CORPORATION (JP) 2007-05-15 — — US disclosed
EP-1770441-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-04-04 — — EP disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 — — US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 — — US disclosed
EP-1755000-A2 Positive resist composition and a pattern forming method using the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 — — EP disclosed
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