SCHEMBL6744215

SCHEMBL6744215

CC(Cl)S(=O)(=O)ON1C(=O)c2ccccc2C1=O

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 10/20 0.53
ALDH1A1 P00352 9/20 0.53
MAPT P10636 8/20 0.53
KMT2A Q03164 7/20 0.53
HPGD P15428 7/20 0.53
VDR P11473 3/20 0.53
F2 P00734 4/20 0.49
MEN1 O00255 4/20 0.49
HTT P42858 3/20 0.49
XBP1 P17861 2/20 0.49
CYP1A2 P05177 2/20 0.49
CYP3A4 P08684 2/20 0.49
CYP2C19 P33261 2/20 0.49
LMNA P02545 2/20 0.49
SMN1; SMN2 Q16637 2/20 0.49
NPSR1 Q6W5P4 1/20 0.49
CASP3 P42574 1/20 0.43
GAA P10253 1/20 0.40
MAP2K7 O14733 1/20 0.38
GMNN O75496 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5370317 0.86 KDM4E (0.56) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL7642865 0.76 KMT2A (0.57) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL66141 0.76 KDM4E (0.61) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL29217852 0.75 ALDH1A1 (0.66) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL6809828 0.74 GSK3A (0.31)
SCHEMBL7776318 0.73 ALDH1A1 (0.59) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL11025467 0.72 ALDH1A1 (0.61) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL9064541 0.72 ALDH1A1 (0.61) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL11023526 0.71 KDM4E (0.56) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL11026414 0.71 ALDH1A1 (0.56) KDM4EALDH1A1MAPTKMT2AHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240302743-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2024-09-12 US disclosed
WO-2022138648-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-06-30 WO disclosed
CN-112987497-A Resist composition and resist pattern forming method 东京应化工业株式会社 2021-06-18 CN disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 US disclosed
US-6689535-B2 A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM TOKYO OHKA KOGYO CO., LTD (JP) 2004-02-10 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 US disclosed