Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 10/20 | 0.61 |
| ▸ | ALDH1A1 | P00352 | 10/20 | 0.61 |
| ▸ | MAPT | P10636 | 8/20 | 0.61 |
| ▸ | KMT2A | Q03164 | 7/20 | 0.61 |
| ▸ | HPGD | P15428 | 7/20 | 0.61 |
| ▸ | VDR | P11473 | 3/20 | 0.61 |
| ▸ | MEN1 | O00255 | 4/20 | 0.56 |
| ▸ | F2 | P00734 | 4/20 | 0.56 |
| ▸ | HTT | P42858 | 3/20 | 0.56 |
| ▸ | XBP1 | P17861 | 2/20 | 0.56 |
| ▸ | LMNA | P02545 | 2/20 | 0.56 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.56 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.56 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.56 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.56 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.56 |
| ▸ | GAA | P10253 | 1/20 | 0.46 |
| ▸ | CASP3 | P42574 | 1/20 | 0.45 |
| ▸ | THRB | P10828 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2238574 | 0.83 | ALDH1A1 (0.65) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL3683874 | 0.83 | KDM4E (0.44) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL29217852 | 0.83 | ALDH1A1 (0.66) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL7776318 | 0.80 | ALDH1A1 (0.59) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL11025467 | 0.79 | ALDH1A1 (0.61) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL9064541 | 0.79 | ALDH1A1 (0.61) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL9130722 | 0.79 | PTGS2 (0.47) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL5370317 | 0.79 | KDM4E (0.56) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL3823934 | 0.78 | POLB (0.49) | KDM4EALDH1A1MAPTKMT2AHPGD | |
| SCHEMBL65319 | 0.77 | MAPT (0.47) | KDM4EALDH1A1MAPTKMT2AHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 848 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102768466-A | Chemical amplification type positive photoresist, preparation method and application thereof in two-photon fine processing | CHINESE ACAD TECH INST PHYSICS | 2012-11-07 | — | — | CN | claimed |
| CN-102768467-A | Sensitizer for chemical amplification type positive photoresist and application thereof in preparation of chemical amplification type positive photoresist | CHINESE ACAD TECH INST PHYSICS | 2012-11-07 | — | — | CN | claimed |
| US-6841332-B2 | Photoresist compound and method for structuring a photoresist layer | INFINEON TECHNOLOGY AG (DE) | 2005-01-11 | — | — | US | claimed |
| US-6746827-B2 | INCLUDING A FILM-FORMING POLYMER CONTAINING MOLECULE GROUPS CONVERTABLE INTO ALKALI-SOLUBLE GROUPS BY ACID-CATALYZED REACTION, A PHOTOACID GENERATOR AND A THERMOBASE GENERATOR; SEMICONDUCTORS; CROSSLINKING INHIBITION; ACCURACY; SMOOTHNESS | INFINEON TECHNOLOGIES AG (DE) | 2004-06-08 | — | — | US | claimed |
| US-20030022111-A1 | Photoresist compound and method for structuring a photoresist layer | POLARIS INNOVATIONS LIMITED (IE) | 2003-01-30 | — | — | US | claimed |
| US-20020160315-A1 | Process for structuring a photoresist layer | POLARIS INNOVATIONS LIMITED (IE) | 2002-10-31 | — | — | US | claimed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4667537-A1 | PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-12-24 | — | — | EP | disclosed |
| US-20250382500-A1 | PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE | TOKYO OHKA KOGYO CO LTD (JP) | 2025-12-18 | — | — | US | disclosed |
| US-20250271751-A1 | PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE FILM, LOWER LAYER FILM, METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-08-28 | — | — | US | disclosed |
| US-20250189895-A1 | METHOD OF MANUFACTURING PLATED ARTICLE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-06-12 | — | — | US | disclosed |
| EP-0827970-A2 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | Clariant AG (CH) | 1998-03-11 | — | — | EP | disclosed |
| US-5449705-A | Silicon-containing polyamic acid derivative and photosensitive resin composition using it | CHISSO CORPORATION (JP) | 1995-09-12 | — | — | US | disclosed |
| EP-0085024-B1 | METHOD FOR PRODUCING IMAGES IN PHOTORESIST LAYERS | CIBA-GEIGY AG (CH) | 1987-07-15 | — | — | EP | disclosed |
| EP-0058638-B1 | CURABLE COMPOSITIONS CONTAINING AN ACID-CURABLE RESIN, AND PROCESS FOR CURING THEM | CIBA-GEIGY AG (CH) | 1985-08-28 | — | — | EP | disclosed |
| US-4439517-A | Process for the formation of images with epoxide resin | CIBA-GEIGY CORPORATION (US) | 1984-03-27 | — | — | US | disclosed |
| EP-0085024-A2 | Method for producing images in photoresist layers | CIBA-GEIGY AG (CH) | 1983-08-03 | — | — | EP | disclosed |
| EP-0058638-A2 | Curable compositions containing an acid-curable resin, and process for curing them | CIBA-GEIGY AG (CH) | 1982-08-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | KDM4E 402/4885ALDH1A1 841/4885MAPT 4120/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.