SCHEMBL676298

SCHEMBL676298

C[CH]c1ccccc1O/C=C/CCCCC

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
SOAT2 O75908 1/20 0.35
SOAT1 P35610 1/20 0.35
PTGS2 P35354 1/20 0.35
CYSLTR2 Q9NS75 3/20 0.34
CYSLTR1 Q9Y271 3/20 0.34
EPHX2 P34913 2/20 0.33
FAAH O00519 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
ALDH1A1 P00352 1/20 0.33
HTT P42858 1/20 0.33
POLM Q9NP87 1/20 0.33
POLK Q9UBT6 1/20 0.33
POLL Q9UGP5 1/20 0.33
POLH Q9Y253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4612140 0.81 PTGS2 (0.37) PTGS2CYP1A2CYP2C9CYP2C19ALDH1A1
SCHEMBL4612135 0.81 PTGS2 (0.37) PTGS2CYP1A2CYP2C9CYP2C19ALDH1A1
SCHEMBL22207342 0.81 SOAT2 (0.36) SOAT2SOAT1PTGS2CYSLTR2CYSLTR1
SCHEMBL22207343 0.81 SOAT2 (0.36) SOAT2SOAT1PTGS2CYSLTR2CYSLTR1
SCHEMBL22207459 0.79 SOAT2 (0.38) SOAT2SOAT1PTGS2EPHX2FAAH
SCHEMBL22207272 0.79 SOAT2 (0.38) SOAT2SOAT1PTGS2EPHX2FAAH
SCHEMBL22207389 0.79 SOAT2 (0.38) SOAT2SOAT1PTGS2EPHX2FAAH
SCHEMBL22207084 0.79 SOAT2 (0.38) SOAT2SOAT1PTGS2EPHX2FAAH
SCHEMBL22207461 0.79 SOAT2 (0.38) SOAT2SOAT1PTGS2EPHX2FAAH
SCHEMBL22207494 0.79 SOAT2 (0.38) SOAT2SOAT1PTGS2EPHX2FAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-7232640-B1 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-19 US disclosed
US-20070128547-A1 POSITIVE RESIST COMPOSITION FUJI PHOTO FILM CO., LTD. 2007-06-07 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
EP-1557720-A1 Positive resist composition and pattern formation method using the same FUJI PHOTO FILM CO., LTD. (JP) 2005-07-27 EP disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed