SCHEMBL677006

SCHEMBL677006

CC(C)CCOc1[c]ccc(OCCC(C)C)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.47
MAPK1 P28482 1/20 0.42
EPHX2 P34913 1/20 0.41
NR1H4 Q96RI1 2/20 0.39
PDK2 Q15119 1/20 0.38
GALR3 O60755 1/20 0.36
HSP90AA1 P07900 1/20 0.36
GAA P10253 2/20 0.35
HTT P42858 1/20 0.35
MGAM O43451 1/20 0.35
SI P14410 1/20 0.35
MGAM2 Q2M2H8 1/20 0.35
THRA P10827 1/20 0.35
THRB P10828 1/20 0.35
TLR8 Q9NR97 1/20 0.34
S1PR1 P21453 1/20 0.34
S1PR5 Q9H228 1/20 0.34
TP53 P04637 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
MAPT P10636 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13722495 0.81 TDP1 (0.39) TDP1MAPK1EPHX2NR1H4PDK2
SCHEMBL6135381 0.81 TDP1 (0.46) TDP1MAPK1EPHX2NR1H4PDK2
SCHEMBL919275 0.81 TDP1 (0.46) TDP1MAPK1EPHX2NR1H4PDK2
SCHEMBL1404367 0.80 KMT2A (0.41) NR1H4MAPTKMT2A
SCHEMBL677451 0.79 LTA4H (0.43) GAAMAPTKMT2A
SCHEMBL676285 0.79 NR1H4 (0.37) NR1H4PDK2GAAMAPTKMT2A
SCHEMBL677235 0.77 TSHR (0.47) NR1H4TP53
SCHEMBL2092766 0.76 TSHR (0.50) TP53
SCHEMBL20819716 0.76 TSHR (0.50) TP53
SCHEMBL20819713 0.76 TSHR (0.50) TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9235117-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-01-12 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-2864839-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2015-04-29 EP disclosed
US-20150079508-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-03-19 US disclosed
WO-2013176294-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-11-28 WO disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed